CY7C1383D-133AXC Cypress Semiconductor Corp, CY7C1383D-133AXC Datasheet - Page 9

IC SRAM 18MBIT 133MHZ 100LQFP

CY7C1383D-133AXC

Manufacturer Part Number
CY7C1383D-133AXC
Description
IC SRAM 18MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1383D-133AXC

Memory Size
18M (1M x 18)
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Memory Configuration
1M X 18 / 512K X 36
Clock Frequency
133MHz
Access Time
6.5ns
Supply Voltage Range
3.135V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-1848

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1383D-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1383D-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Truth Table
Document #: 38-05544 Rev. *F
Notes:
Deselected Cycle, Power
Down
Deselected Cycle, Power
Down
Deselected Cycle, Power
Down
Deselected Cycle, Power
Down
Deselected Cycle, Power
Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
4. X=Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
the ADSP or with the assertion of ADSC . As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't
care for the remainder of the write cycle.
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Cycle Description
[4, 5, 6, 7, 8]
ADDRESS
External
External
External
External
External
Current
Current
Current
Current
Current
Current
Used
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
CE
H
X
X
X
X
H
H
X
H
X
X
H
H
X
H
L
L
L
L
L
L
L
L
1
CE
X
X
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
L
2
CE
H
X
X
X
X
X
X
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
3
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
ADSP
X
H
H
X
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
L
L
L
ADSC
X
H
H
H
H
H
H
H
H
H
H
H
H
L
X
X
L
L
X
X
L
L
L
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F
X
ADV WRITE
. Writes may occur only on subsequent clocks after
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
H
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
L
L
L
L
L
OE
X
X
X
X
X
X
H
X
H
H
H
X
X
H
H
X
X
L
L
L
L
L
L
CLK
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Tri-State
L-H Q
L-H Tri-State
L-H D
L-H Q
L-H Tri-State
L-H Q
L-H Tri-State
L-H Q
L-H Tri-State
L-H D
L-H D
L-H Q
L-H Tri-State
L-H Q
L-H Tri-State
L-H D
L-H D
X
Page 9 of 29
Tri-State
DQ
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