CY7C1383D-133AXC Cypress Semiconductor Corp, CY7C1383D-133AXC Datasheet - Page 6

• Manufacturer Part Number: CY7C1383D-133AXC
• Description: IC SRAM 18MBIT 133MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1383D-133AXC

• Memory Size: 18M (1M x 18)
• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Memory Configuration: 1M X 18 / 512K X 36
• Clock Frequency: 133MHz
• Access Time: 6.5ns
• Supply Voltage Range: 3.135V To 3.6V
• Memory Case Style: TQFP
• No. Of Pins: 100
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-1848

Pin Definitions
Document #: 38-05544 Rev. *F
A
BW
BW
GW
CLK
CE
CE
CE
OE
ADV
ADSP
ADSC
BWE
ZZ
DQ
DQP
0
, A
1
2
3
s
A
C
[2]
, BW
, BW
X
Name
1
, A
B
D
Asynchronous
Asynchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Input-
Input-
Input-
Input-
Clock
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
IO-
IO-
IO
Address inputs used to select one of the address locations. Sampled at the rising edge
of the CLK if ADSP or ADSC is active LOW, and CE
A
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the
SRAM. Sampled on the rising edge of CLK.
Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a
global write is conducted (all bytes are written, regardless of the values on BW
Clock input. Used to capture all synchronous inputs to the device. Also used to increment
the burst counter when ADV is asserted LOW, during a burst operation.
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE
is sampled only when a new external address is loaded.
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction
with CE
external address is loaded.
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction
with CE
address is loaded.
Output enable, asynchronous input, active LOW. Controls the direction of the IO pins.
When LOW, the IO pins behave as outputs. When deasserted HIGH, IO pins are tri-stated,
and act as input data pins. OE is masked during the first clock of a read cycle when emerging
from a deselected state.
Advance input signal. Sampled on the rising edge of CLK. When asserted, it automatically
increments the address in a burst cycle.
Address strobe from processor, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A
asserted, only ADSP is recognized. ASDP is ignored when CE
Address strobe from controller, sampled on the rising edge of CLK, active LOW.
When asserted LOW, addresses presented to the device are captured in the address
registers. A
asserted, only ADSP is recognized .
Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal
must be asserted LOW to conduct a byte write.
ZZ sleep input. This active HIGH input places the device in a non-time critical sleep
condition with data integrity preserved. For normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull down.
Bidirectional data IO lines. As inputs, they feed into an on-chip data register that is
triggered by the rising edge of CLK. As outputs, they deliver the data contained in the
memory location specified by the addresses presented during the previous clock rise of the
read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the
pins behave as outputs. When HIGH, DQ
outputs are automatically tri-stated during the data portion of a write sequence, during the
first clock when emerging from a deselected state, and when the device is deselected,
regardless of the state of OE.
Bidirectional data parity IO lines. Functionally, these signals are identical to DQ
write sequences, DQP
[1:0]
feed the 2-bit counter.
1
2
1
and CE
and CE
and CE
[1:0]
[1:0]
are also loaded into the burst counter. When ADSP and ADSC are both
are also loaded into the burst counter. When ADSP and ADSC are both
2
3
3
to select or deselect the device. CE
[2]
[2]
to select or deselect the device. ADSP is ignored if CE
to select or deselect the device. CE
X
is controlled by BW
Description
s
and DQP
X
correspondingly.
CY7C1381D, CY7C1381F
CY7C1383D, CY7C1383F
X
1
3
, CE
are placed in a tri-state condition.The
is sampled only when a new external
2
, and CE
2
is sampled only when a new
1
is deasserted HIGH.
3
[2]
are sampled active.
[A:D]
1
is HIGH. CE
Page 6 of 29
and BWE).
s
. During
1
[+] Feedback