CY62158EV30LL-45ZSXI Cypress Semiconductor Corp, CY62158EV30LL-45ZSXI Datasheet - Page 6

• Manufacturer Part Number: CY62158EV30LL-45ZSXI
• Description: IC SRAM 8MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62158EV30LL-45ZSXI

• Memory Size: 8M (1M x 8)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 8Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 20b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 25mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 8b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2081; CY62158EV30LL-45ZSXI

Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Document #: 38-05578 Rev. *G
V
I
t
t
Notes
CCDR
CDR
R
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
10. Chip enables (CE
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full Device AC operation requires linear V
Parameter
DR
[12]
[11]
[10]
V
CE
CE
or
CC
2
1
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
1
and CE
for Data Retention
2
) must be at CMOS level to meet the I
Description
CC
ramp from V
V
t
CC
CDR
, min
DR
to V
V
or CE
or V
CC
CC(min)
SB2
IN
= 1.5 V, CE
DATA RETENTI/ON MODE
/ I
2
< 0.2 V
CCDR
< 0.2 V, V
> 100 s or stable at V
Conditions
spec. Other inputs can be left floating.
V
DR
1
IN
> 1.5 V
> V
> V
CC
CC
 0.2 V
CC(min)
0.2 V
> 100 s.
Min
1.5
45
–
0
CC
CY62158EV30 MoBL
V
= V
CC
t
R
CC(typ)
, min
Typ
, T
–
2
–
–
A
= 25 °C.
[9]
Max
–
5
–
–
Page 6 of 16
Unit
A
ns
ns
V
®
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