CY62158EV30LL-45ZSXI Cypress Semiconductor Corp, CY62158EV30LL-45ZSXI Datasheet - Page 15

• Manufacturer Part Number: CY62158EV30LL-45ZSXI
• Description: IC SRAM 8MBIT 45NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY62158EV30LL-45ZSXI

• Memory Size: 8M (1M x 8)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 45 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.2 V
• Maximum Operating Current: 25 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 2.5 V, 3.3 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 2.2V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 8Mb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 2.5/3.3V
• Address Bus: 20b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 25mA
• Operating Supply Voltage (min): 2.2V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 8b
• Number Of Words: 1M
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2081; CY62158EV30LL-45ZSXI

Document History Page
Document #: 38-05578 Rev. *G
Document Title: CY62158EV30 MoBL
Document Number: 38-05578
Rev.
*A
*B
*C
*D
*E
*G
*F
**
ECN No.
1015643
2934396
3110202
3269641
270329
291271
444306
467052
Issue Date
12/14/2010
05/30/2011
See ECN
See ECN
See ECN
See ECN
See ECN
06/03/10
Change
Orig. of
RAME
PRAS
®
NXR
NXR
VKN
VKN
SYT
PCI
, 8-Mbit (1024 K × 8) Static RAM
New Data Sheet
Converted from Advance Information to Preliminary
Changed I
Converted from Preliminary to Final.
Removed 35 ns speed bin
Removed “L” bin.
Removed 44 pin TSOP II package
Included 48 pin TSOP I package
Changed the I
to 25 mA for test condition f = fax = 1/t
Changed the I
Changed the I
A to 2 A respectively.
Updated Thermal Resistance table
Changed Test Load Capacitance from 50 pF to 30 pF.
Added Typ value for I
Changed the I
Corrected t
Changed t
Changed t
Changed t
Changed t
Changed t
Changed t
Updated the ordering Information and replaced the Package Name column with
Package Diagram.
Included 44 pin TSOP II package in Product Offering.
Removed TSOP I package; Added reference to CY62157EV30 TSOP I
Updated the ordering Information table
Added footnote #8 related to I
Added footnote #21 related to chip enable
Updated package diagrams
Updated template
Updated Logic Block Diagram and Package Diagram.
Added Ordering Code Definitions.
Updated Features.
Removed the note “For best practice recommendations, refer to the Cypress
application note “System Design Guidelines” at http://www.cypress.com.” and its
reference in
Updated
Added
Updated in new template.
Acronyms
Data Retention
CCDR
LZOE
LZCE
HZCE
PWE
SD
LZWE
R
Functional
in Data Retention Characteristics from 100 s to t
from 22 to 25
CC
SB1
CC
CCDR
from 30 to 35
from 3 to 5
from 6 to 10
from 22 to 18
from 6 to 10
from 4 to 4.5 A
Typ value from 16 mA to 18 mA and I
max value from 2.3 mA to 3 mA for test condition f = 1MHz.
and I
and
max value from 4.5 A to 5 A
CCDR .
Units of
SB2
Description.
Characteristics.
max value from 4.5 A to 8 A and Typ value from 0.9
Description of Change
SB2
Measure.
and I
RC.
CCDR
CY62158EV30 MoBL
CC
max value from 28 mA
RC
ns
Page 15 of 16
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