MCIMX6U6AVM08AB Freescale Semiconductor, MCIMX6U6AVM08AB Datasheet - Page 38

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MCIMX6U6AVM08AB

Manufacturer Part Number
MCIMX6U6AVM08AB
Description
Processors - Application Specialized i.MX6 DualLite
Manufacturer
Freescale Semiconductor
Type
Automotive and Infotainment Processorsr
Datasheet

Specifications of MCIMX6U6AVM08AB

Rohs
yes
Core
ARM Cortex A9
Processor Series
i.MX6
Data Bus Width
64 bit
Maximum Clock Frequency
800 MHz
Instruction / Data Cache Memory
32 KB
Data Ram Size
128 KB
Data Rom Size
96 KB
Operating Supply Voltage
1.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
BGA 2240
Interface Type
I2S, SSI, AC97, ESAI, UARTS, eCSPI, I2C, Ethernet, PWM, SJC, GPIO, KPP, SPDIF
Memory Type
DDR3
Minimum Operating Temperature
- 40 C
Number Of Timers
2

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Electrical Characteristics
4.6.1
Table 24
operating ranges in
38
1
Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below
0.6 V, and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot
must be controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or
other methods. Non-compliance to this specification may affect device reliability or cause permanent damage to the device.
Pull-down resistor (100_kΩ PD)
Pull-down resistor (100_kΩ PD)
Input Hysteresis(OVDD= 1.8V)
Input Hysteresis(OVDD=3.3V
Pull-up resistor (100_kΩ PU)
Pull-up resistor (100_kΩ PU)
High-Level input voltagev
Pull-up resistor (22_kΩ PU)
Pull-up resistor (22_kΩ PU)
Pull-up resistor (47_kΩ PU)
Pull-up resistor (47_kΩ PU)
Low-Level input voltage
High-level output voltage
Keeper Circuit Resistance
Low-level output voltage
Input current (no PU/PD)
Schmitt trigger VT+
Schmitt trigger VT-
shows DC parameters for GPIO pads. The parameters in
General Purpose I/O (GPIO) DC Parameters
Parameter
i.MX 6Solo/6DualLite Automotive and Infotainment Applications Processors, Rev. 1
Table
2,3
2,3
9, unless otherwise noted.
1,2
1,2
1
1
VHYS_HighVDD
VHYS_LowVDD
GPIO DC Electrical Characteristics
Table 24. GPIO DC Parameters
RPU_100K
RPU_100K
RPD_100K
RPD_100K
RPU_22K
RPU_22K
RPU_47K
RPU_47K
R_Keeper
Symbol
VTH+
VTH-
V
VOL
VIH
VIL
IIN
OH
(ipp_dse=011,100,101,110,1
(ipp_dse=011,100,101,110,1
VI =.3*OVDD, VI = .7* OVDD
(ipp_dse=001,010)
(ipp_dse=001,010)
VI = 0, VI = OVDD
Test Conditions
Ioh= -0.1mA
OVDD=1.8V
OVDD=3.3V
Vin=oOVDD
Vin=OVDD
Vin=OVDD
Vin=OVDD
Iol= 0.1mA
Ioh= -1mA
Iol= 1mA
Vin=0V
Vin=0V
Vin=0V
Vin=0V
11)
11)
Table 24
are guaranteed per the
OVDD-0.
0.7*OVD
0.5*OVD
0.15
Min
250
250
105
15
-1
D
D
0
Freescale Semiconductor
0.3*OVD
0.5*OVD
OVDD
Max
212
100
175
48
48
V
D
D
1
1
1
1
1
Units
mV
mV
mV
mV
uA
uA
uA
uA
uA
uA
uA
uA
uA
V
V
V

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