E909.05A61DC ELMOS Semiconductor, E909.05A61DC Datasheet - Page 10

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E909.05A61DC

Manufacturer Part Number
E909.05A61DC
Description
Processors - Application Specialized Halios multipurpose sensor IC
Manufacturer
ELMOS Semiconductor
Datasheet

Specifications of E909.05A61DC

Rohs
yes
Processor Series
EL16
Data Bus Width
16 bit
Maximum Clock Frequency
8 MHz
Data Ram Size
3 kB
Operating Supply Voltage
2.25 V to 2.75 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
QFN-32
Interface Type
I2C, SPI
Memory Type
Flash, SRAM
Minimum Operating Temperature
- 40 C
Number Of Timers
2
PRELIMINARY INFORMATION AUG 02, 2011
Table 4.4.3.1 IO Interface
 : Will not be tested in production test
Table 4.4.4.1.1 Transmitting path: 10 bit DAC
This document contains information on a pre-production product. ELMOS Semiconductor AG reserves the right to change specifications and information herein without notice.
ELMOS Semiconductor AG
4.4.3 GPIO Module
4.4.4 HALIOS Interface
4.4.4.1
No. Parameter
No. Parameter
HALIOS® MULTI-PURPOSE OPTICAL SENSOR WITH HIGH LIGHT IMMUNITY
1
2
3
4
5
6
7
8
1
2
3
4
Low-to-high threshold level
High-to-low threshold level
Pull down resistor
Output Voltage Low
Output Voltage High
Low Level Output Current
High Level Output Current
Tri-State Input/Output Leak-
age Current
DAC resolution
Integral non linearity (INL)
Differential non linearity
(DNL)
DAC output voltage at full
scale
Current Generation for LED Modulators
Condition
V
GPIOIOL = 2 mA
VDDI = 1.8 V
GPIOIOH = 2 mA
VDDI = 1.8 V
GPIOVOL=0.4V
GPIOVOH=2.4V
Vout=VDDI or 0 V
Condition
IN
> 0.75 · V
Data Sheet 10 / 67
DDI
GPIOVOL
GPIOIOH
GPIOIOL
GPIOILC
Symbol
Symbol
GPIO
GPIO
R
OVOH
GPI-
V
GPIOPD
Ed
Ei
N
MAX
LH
HL
-12.8
Min.
Min.
0.25
1.4
3.5
43
-1
Typ.
Typ.
1.22
5.7
QM-No.: 25DS0014E.00
61
10
-8
2
2
Max.
Max.
0.80
-3.9
119
0.4
7
1
E909.05
Unit
Unit
LSB
LSB
V
V
mA
mA
uA
bit
V
V
V
DDI
DDI

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