E981.10A52KC ELMOS Semiconductor, E981.10A52KC Datasheet
E981.10A52KC
Specifications of E981.10A52KC
Related parts for E981.10A52KC
E981.10A52KC Summary of contents
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... Option1 transistor External µC GND ELMOS Semiconductor AG General Description This IC is intended to be used as transceiver in IO-Link and standard IO mode applications in sensor and ac- tuator devices. Communication and power supply work across a common three wire cable to the IO-Link Mas- ter, so continued use of available wiring is possible. ...
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... RXD D_O 18 TXD D_I 19 SPEED D_I 20 TXEN D_I GND3, 21 Exposed S die pad Digital Analog Supply Input Output High Voltage ELMOS Semiconductor AG Pull Description - Supply host interface Reduced overcurrent Down limitation threshold - Ground Down Test Not internally connected - Test - Internal supply I/O ...
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... Figure 1: Package pinout top view All GND pins have to be connected to local GND of the application. 2 Block Diagram VREGO VDD VDD_IO RXD SILIM ILIM WAKE TXD TXEN SPEED Figure 2: Block Diagram ELMOS Semiconductor Exposed SILIM diepad GND2 3 13 ...
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... Description Supply voltage at pin VDDH 1 2 Digital interface supply 3 Digital interface supply Operating temperature 4 range Supply voltage at pin VDDH 5 for IO-Link communication ELMOS Semiconductor AG condition symbol VDDH VDD_IO C/Q-GND VCQ t<500ms C/Q-GND VDDH-C/Q VCQ t<500ms VDDH-C/Q VIO_DIG ESD ...
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... Description Decoupling capacitor at VDD 1 1) C_VDD = 100nF is sufficient for the stable operation of the voltage regulator. However for a good blocking of the 5V sup- ply (spike supression recommended to use 330nF or more (up to 2µF). ELMOS Semiconductor AG condition symbol Min. No external load IDDH at VDD / VREGO ...
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... DC driver residual voltage 6 high Overcurrent shutoff 7 threshold low Overcurrent shutoff 8 threshold high Reduction of overcurrent shutoff threshold (Divided 9 by) in contrast to SILIM=low ELMOS Semiconductor AG condition symbol VDIG_IH Input Pins VDIG_IL Input Pins Iload=2mA; VDIG_OH Pins RXD, WAKE, ILIM Iload=-2mA; VDIG_OL Pins RXD, WAKE, ILIM ...
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... Input threshold high 1 Input threshold low 2 Input threshold hysteresis 3 Receiver input resistance 4 VDDH voltage range for IO-Link conform communi- 5 cation ELMOS Semiconductor AG condition symbol Cload=5nF, Rload=2k SPEED=high, TXD high TDR to low transition Cload=5nF, Rload=2k SPEED=low, TXD high TDR to low transition Cload=5nF, Rload=2k ...
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... Description Supply voltage at VDDH 1 for wake-up functionality 4.5.2 ac characteristics no. Description Wake-up debounce time 1 4.6 temperature monitor 4.6.1 Dc characteristics no. Description Overtemperature threshold 1 ELMOS Semiconductor AG condition symbol Information TD_RX parameter TBIT_MIN condition symbol VDDH condition symbol Single event of over- load with receiver Twu level change opposite ...
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... The supply voltage VDD_IO must be present in order to supply the host interface and enable the transmitter. If the internal voltage regulator is not used, an external 5V has to be applied at pin VDD. No sequence is mandatory in order to apply VDD and VDD_IO. ELMOS Semiconductor AG Supply current for Pin VDD ...
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... SPEED=low is default 38.4 kBaud or 4.8 kBaud, SPEED=high sets the transmission speed to 230.4 kBaud. The transmitter is operable only if VDD and VDD_IO are within their specified limits. In SIO mode the transmitter must be used in highspeed mode (SPEED=high) to enable a wide range of different load conditions. ELMOS Semiconductor AG tXD c/Q HIGH-Z LOW ...
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... V TXEN V VDD_IO 0V V TXD V VDD_IO Driver stage tristate, depends on external signal on C RXD V VDD_IO depends on external signal on C/Q 0V Figure 3: Transmitter polarity ELMOS Semiconductor AG Driver stage tristate, depends on external signal on C/Q depends on external signal on C/Q Data Sheet QM-No.: 25DS0007E.02 2010-06-16 11/19 E981. ...
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... Inductive overloads may simulate a wake up condition and cause the driver to turn off for the current TXEN=low phase. ELMOS Semiconductor AG TDF TDR Data Sheet QM-No ...
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... It can be reset with a TXEN=low and activated again with a new TXEN=high. The figure below shows the functionality of the overcurrent and wake up recognition as well as the resulting be- havior at the pin ILIM and WAKE UP in detail. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0007E.02 2010-06-16 13/19 E981 ...
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... Wakeup state - Pin ILIM=High - Pin WAKE = high - C/Q driver shut off (HighZ ) Loop until TXEN= LOW Figure 5: Overcurrent and wake up functionality ELMOS Semiconductor AG Start - Edge TXEN Low to High or - Edge at TXD and TXEN=high and - no wakeup event - No recognition of overcurrent event for 20us ...
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... The temperature monitor shuts the transmitter off in case of excessive junction temperature which can occur with a too high ambient temperature and/or the dissipation of too much power within the IC. 6 Package Dimensions and ratings Package Type: QFN 4x4, 0.5mm pitch, 20 Pins The package dimensions and ratings refer to JEDEC MO220 VGGD-5. ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0007E.02 2010-06-16 15/19 E981.10 ...
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... Wake-up ............................................................................................................................................................................................... .. 8 4.5.1 DC Characteristics ......................................................................................................................................................................... .. 8 4.5.2 AC Characteristics ......................................................................................................................................................................... .. 8 4.6 Temperature monitor ...................................................................................................................................................................... .. 8 4.6.1 DC Characteristics ......................................................................................................................................................................... .. 8 5 Functional Description ....................................................................................................................................................................... .. 9 5.1 Power Supply ...................................................................................................................................................................................... .. 9 5.1.1 VDDH ................................................................................................................................................................................................. .. 9 5.1.2 VDD_IO ............................................................................................................................................................................................ .. 9 5.1.3 VDD ................................................................................................................................................................................................... .. 9 5.1.4 Power up sequences .................................................................................................................................................................... .. 9 5.2 Host interface .................................................................................................................................................................................... 10 5.3 Transmitter .......................................................................................................................................................................................... 10 5.3.1 Transmitter overload .................................................................................................................................................................... 12 5.3.2 Transmitter loads ........................................................................................................................................................................... 12 5.4 Receiver ................................................................................................................................................................................................ 13 5.5 Wake-up ............................................................................................................................................................................................... 13 5.6 Temperature monitor ...................................................................................................................................................................... 15 6 Package Dimensions and Ratings .................................................................................................................................................... 15 ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0007E.02 2010-06-16 16/19 E981.10 ...
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... Figures Figure 1: Package pinout top view...................................................................................................................................................... .. 3 Figure 2: Block Diagram ......................................................................................................................................................................... .. 3 Figure 3: Transmitter polarity .............................................................................................................................................................. 11 Figure 4: Transmitter characteristics ................................................................................................................................................. 12 Figure 5: Overcurrent and wake up functionality ......................................................................................................................... 14 ELMOS Semiconductor AG Data Sheet QM-No.: 25DS0007E.02 2010-06-16 17/19 E981.10 ...
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... General Disclaimer Information furnished by ELMOS Semiconductor AG is believed to be accurate and reliable. However, no responsi- bility is assumed by ELMOS Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ELMOS Semiconductor AG ...
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... ELMOS Semiconductor AG – Headquarters Heinrich-Hertz-Str 44227 Dortmund | Germany Phone + 49 (0) 231 - 100 | Fax + 49 (0) 231 - 159 helpdesk@elmos.eu | www.elmos.de 19/19 ...