MCIMX6S5DVM10AB Freescale Semiconductor, MCIMX6S5DVM10AB Datasheet - Page 40

• Manufacturer Part Number: MCIMX6S5DVM10AB
• Description: Processors - Application Specialized i.MX6 Solo rev 1.1
• Manufacturer: Freescale Semiconductor
• Type: Multimedia Applicationsr

Specifications of MCIMX6S5DVM10AB

• Rohs: yes
• Core: ARM Cortex A9
• Processor Series: i.MX6
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 1 GHz
• Data Ram Size: 256 kB
• Operating Supply Voltage: 1.175 V to 1.5 V
• Mounting Style: SMD/SMT
• Package / Case: FCBGA-624
• Interface Type: I2C, I2S, SDIO, UART, USB
• Memory Type: L1/L2 Cache, ROM, SRAM

1
2
3
Electrical Characteristics
4.6.3
The LVDS interface complies with TIA/EIA 644-A standard. See TIA/EIA STANDARD 644-A,
“Electrical Characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits” for details.
Table 26
4.7
This section includes the AC parameters of the following I/O types:
The GPIO and DDR I/O load circuit and output transition time waveforms are shown in
Figure
40
OVDD – I/O power supply (1.425 V–1.575 V for DDR3 and 1.283 V–1.45 V for DDR3L)
Vref – DDR3/DDR3L external reference voltage
The single-ended signals need to be within the respective limits (Vih(dc) max, Vil(dc) min) for single-ended signals as well as
the limitations for overshoot and undershoot.
•
•
•
240 Ω unit calibration resolution
Input current (no pull-up/down)
Keeper Circuit Resistance
Output Differential Voltage
5.
General Purpose I/O (GPIO)
Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes
LVDS I/O
Output High Voltage
shows the Low Voltage Differential Signaling (LVDS) I/O DC parameters.
Output Low Voltage
I/O AC Parameters
LVDS I/O DC Parameters
Offset Voltage
Parameters
Parameter
i.MX 6Solo/6DualLite Applications Processors for Consumer Products, Rev. 1
Table 25. DDR3/DDR3L I/O DC Electrical Characteristics (continued)
CL includes package, probe and fixture capacitance
Table 26. LVDS I/O DC Characteristics
Symbol
Symbol
Figure 4. Load Circuit for Output
Rkeep
Rres
VOD
VOH
VOS
VOL
From Output
Iin
Under Test
Test Conditions
Rload-100 Ω Diff
IOH = 0 mA
IOL = 0 mA
VI = 0,VI = OVDD
Test Conditions
Test Point
CL
1.125
1.25
Min
250
0.9
Min
-2.9
105
1.375
1.025
Typ
350
1.2
Freescale Semiconductor
Figure 4
Max
1.375
165
2.9
Max
1.25
10
450
1.6
and
Unit
Unit
mV
kΩ
μA
V
V
V
Ω