AT45DB161E-SSHF-T Adesto Technologies, AT45DB161E-SSHF-T Datasheet - Page 34

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AT45DB161E-SSHF-T

Manufacturer Part Number
AT45DB161E-SSHF-T
Description
Flash 16M 2.3-3.6V 85Mhz Serial Flash
Manufacturer
Adesto Technologies
Datasheet

Specifications of AT45DB161E-SSHF-T

Data Bus Width
8 bit
Memory Type
Data Flash
Memory Size
16 Mbit
Architecture
Flexible, Uniform Erase
Timing Type
Synchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.3 V
Maximum Operating Current
26 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
10.2.1 Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, the CS pin must simply be pulsed by asserting the CS pin, waiting the
minimum necessary t
dummy byte opcode can also be entered while the CS pin is being pulsed just as in a normal operation like the Program
Suspend operation; the dummy byte opcode is simply ignored by the device in this case. After the CS pin has been
deasserted, the device will exit from the Ultra-Deep Power-Down mode and return to the standby mode within a
maximum time of t
operation, then that operation will be ignored and nothing will be performed. The system must wait for the device to return
to the standby mode before normal command operations such as Continuous Array Read can be resumed.
Since the contents of the SRAM buffers cannot be maintained while in the Ultra-Deep Power-Down mode, the SRAM
buffers will contain undefined data when the device returns to the standby mode.
Figure 10-4. Exit Ultra-Deep Power-Down
CS
SO
I
CC
High-impedance
t
CSLU
Ultra-Deep Power-Down Mode Current
XUDPD
CSLU
. If the CS pin is reasserted before the t
Active Current
time, and then deasserting the CS pin again. To facilitate simple software development, a
t
XUDPD
Standby Mode Current
XUDPD
time has elapsed in an attempt to start a new
Adesto AT45DB161E [DATASHEET]
8782D–DFLASH–11/2012
34

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