AT45DB161E-SHD-B Adesto Technologies, AT45DB161E-SHD-B Datasheet - Page 71

• Manufacturer Part Number: AT45DB161E-SHD-B
• Description: Flash 16M 2.5-3.6V 85Mhz Serial Flash
• Manufacturer: Adesto Technologies

Specifications of AT45DB161E-SHD-B

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: Data Flash
• Memory Size: 16 Mbit
• Architecture: Flexible, Uniform Erase
• Timing Type: Synchronous
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 26 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Factory Pack Quantity: 95
• Part # Aliases: AT45DB161E-SHD-T

Doc. Rev.
8782B
8782A
06/2012
03/2012
Date
Comments
Update “Enable Sector Protection”, “Disable Sector Protection”, “Erase Sector Protection
Register”, “Program Sector Protection Register”, and “Read Sector Lockdown Register” figures.
Correct descriptions for PAGE SIZE, bit 0 in “Status Register Format – Byte 1” table.
Insert 1Bh opcode in “Detailed Bit-level Addressing Sequence for Binary Page Size (512 bytes)”
and “Detailed Bit-level Addressing Sequence for Standard DataFlash Page Size
(528 bytes)” tables.
DC Characterisitcs:
AC Characterisitics:
Program and Erase Characteristics:
Update ordering code detail.
Replace package option from 9C1-CBGA to 9CC1-UBGA.
Various topographical edits throughout document.
Update template.
Initial document release.
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Add I
maximum 10mA.
Add I
Update I
Update I
Update I
Update I
50MHz, decrease maximum from 20mA to 19mA; and at
85MHz, increase typical 14mA to 16mA and maximum 23mA to 26mA.
Update I
maximum from 20mA to 18mA.
Remove typical columns, t
f
t
t
t
t
t
t
t
Remove 2.3V minimum, typical, and maximum columns.
t
t
t
t
CAR3
WH
WL
CS
H
DIS
V
COMP
EP
PE
SE
CE
– decrease 2.3V/2.5V minimum from 3ns to 1ns.
– decrease 2.3V maximum from 8ns to 7ns.
– decrease typical from 17ms to 15ms and maximum from 50ms to 40ms.
– decrease typical from 15ms to 12ms and maximum from 50ms to 35ms.
– decrease typical from 1.6s to 1.4s and maximum from 5s to 3.5s.
– decrease 2.3V/2.5V minimum from 50ns to 30ns.
– decrease typical from 25s to 22s and maximum from 60s to 40s.
– decrease 2.3V minimum from 6.8ns to 6.4ns and 2.5V minimum from 6.8ns to 5.2ns.
– decrease 2.3V minimum from 6.8ns to 6.4ns and 2.5V minimum from 6.8ns to 5.2ns.
– decrease 2.3V maximum from 35ns to 7ns and 2.5V from 35ns to 6ns.
CC1
CC4
– increase 2.3V/2.5V maximum 10MHz to 20MHz.
– decrease 2.3V/2.5V maximum from 250μs to 220μs.
ZP
DP
CC0
CC1
CC2
– Active Current, Erase Operation, V
condition of f = 20MHz; I
to I
to I
to I
to I
to I
UDPD
DPD
CC1
CC2
CC3
and I
– decrease typical from 0.5μA to 0.4μA and maximum from 2μA to 1μA.
– decrease typical 7mA to 6.5mA.
– 33MHZ, increase maximum from 17mA to 19mA;
– remove erase operation, decrease typical from 15mA to 12mA and
SP
to I
SECP
SB
, and t
.
OUT
SECUP
= 0mA; V
Adesto AT45DB161E [DATASHEET]
.
CC
CC
= 3.6V, typical 14mA and maximum 20mA.
= 3.6V with typical 7.5mA and
8782D–DFLASH–11/2012
71