AT45DB161E-SHD-B Adesto Technologies, AT45DB161E-SHD-B Datasheet - Page 39

• Manufacturer Part Number: AT45DB161E-SHD-B
• Description: Flash 16M 2.5-3.6V 85Mhz Serial Flash
• Manufacturer: Adesto Technologies

Specifications of AT45DB161E-SHD-B

• Rohs: yes
• Data Bus Width: 8 bit
• Memory Type: Data Flash
• Memory Size: 16 Mbit
• Architecture: Flexible, Uniform Erase
• Timing Type: Synchronous
• Interface Type: SPI
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.5 V
• Maximum Operating Current: 26 mA
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Factory Pack Quantity: 95
• Part # Aliases: AT45DB161E-SHD-T

14.
Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which commands
can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be
started. However, during the internally self-timed portion of Group B commands, any command in Group C can be
executed. The Group B commands using Buffer 1 should use Group C commands using Buffer 2 and vice versa. Finally,
during the internally self-timed portion of a Group D command, only the Status Register Read command should be
executed.
Most of the commands in Group B can be suspended and resumed, except the Buffer Transfer, Buffer Compare, and
Auto Page Rewrite operations. If a Group B command is suspended, all of the Group A commands can be executed. See
Table 6-4
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
11. Auto Page Rewrite
1.
2.
3.
4.
1.
2.
3.
4.
5.
6.
Main Memory Page Read
Continuous Array Read (SPI)
Read Sector Protection Register
Read Sector Lockdown Register
Read Security Register
Page Erase
Block Erase
Sector Erase
Chip Erase
Main Memory Page to Buffer 1 (or 2) Transfer
Main Memory Page to Buffer 1 (or 2) Compare
Buffer 1 (or 2) to Main Memory Page Program with Built-In Erase
Buffer 1 (or 2) to Main Memory Page Program without Built-In Erase
Main Memory Page Program through Buffer 1 (or 2) with Built-In Erase
Buffer 1 (or 2) Read
Buffer 1 (or 2) Write
Status Register Read
Manufacturer and Device ID Read
Erase Sector Protection Register
Program Sector Protection Register
Sector Lockdown
Program Security Register
Buffer and Page Size Configuration
Freeze Sector Lockdown
to determine which of the Group B, Group C, and Group D commands are allowed.
Adesto AT45DB161E [DATASHEET]
8782D–DFLASH–11/2012
39