MM912F634DV1AER2 Freescale Semiconductor, MM912F634DV1AER2 Datasheet - Page 18
MM912F634DV1AER2
Manufacturer Part Number
MM912F634DV1AER2
Description
16-bit Microcontrollers - MCU DUAL LS/HS SWITCH W. LIN
Manufacturer
Freescale Semiconductor
Datasheet
1.MM912G634DV1AE.pdf
(338 pages)
Specifications of MM912F634DV1AER2
Rohs
yes
Core
HCS12
Processor Series
MM912F634
Data Bus Width
16 bit
Maximum Clock Frequency
20 MHz
Program Memory Size
32 KB
Data Ram Size
2 KB
On-chip Adc
Yes
Operating Supply Voltage
4.5 V to 5.5 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
LQFP-48
Mounting Style
SMD/SMT
A/d Bit Size
10 bit
A/d Channels Available
15
Interface Type
SPI
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
6
Number Of Timers
1
Program Memory Type
Flash
Supply Voltage - Max
4.5 V
Supply Voltage - Min
4.5 V
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Electrical Characteristics
Table 19. Static Electrical Characteristics - High Voltage Inputs - Lx
Freescale Semiconductor
Table 20. Static Electrical Characteristics - General Purpose I/O - PTB[0…2]
Low Detection Threshold
7.0 V
5.5 V
High Detection Threshold
7.0 V
5.5 V
Hysteresis
5.5 V
Input Current Lx (-0.2 V < V
Analog Input Impedance Lx
Lx Series Resistor
Lx Capacitor (optional)
Analog Input Divider Ratio (RATIO
LXDS (Lx Divider Select) = 0
LXDS (Lx Divider Select) = 1
Analog Input Divider Ratio Accuracy
Analog Inputs Channel Ratio - Mismatch
LXDS (Lx Divider Select) = 0
LXDS (Lx Divider Select) = 1
Note:
Input high voltage
Input low voltage
Input hysteresis
Input high voltage (VS1 = 3.7 V)
Input low voltage (VS1 = 3.7 V)
Input hysteresis (VS1 = 3.7 V)
Input leakage current (pins in high-impedance input mode)
(V
Output high voltage (pins in output mode) Full drive I
Output low voltage (pins in output mode) Full drive I
Internal pull-up resistance (V
Input capacitance
Clamp Voltage when selected as analog input
Analog Input impedance = 10 kOhm max, Capacitance = 12 pF
Analog Input Capacitance = 12 pF
Maximum current all PTB combined (VDDX capability)
Output Drive strength at 10 MHz
20.
IN
= V
The ESD behavior specified in
V
V
V
V
V
DDX
SUP
SUP
SUP
SUP
SUP
or V
27 V
7 V
27 V
7 V
27 V
SSX
)
(20)
IN
IH
< VS1)
min > Input voltage > V
Ratings
Ratings
Lx
= V
Section 3.8, “ESD Protection and Latch-up Immunity"
Lx
/ V
ADOUT0
OL
OH
)
IL
= +10 mA
= –10 mA
max)
RATIO
Lx
RATIO
Symbol
Symbol
V
R
V
V
V
V
MATCH
V
I
R
C
V
C
V
R
CL_AIN
I
HYS3.7
R
C
BMAX
THH
HYS
LxIN
V
THL
V
C
IN
V
V
IH3.7
IL3.7
I
Lx
Lx
HYS
OUT
PUL
IN
OH
AIN
AIN
OL
IH
IN
IL
LX
Lx
are guaranteed without the optional capacitor.
V
0.7V
V
V
0.25
Min
-5.5
DDX
26.25
2.2
1.5
2.6
2.0
-10
9.5
SS
SS
VDD
Min
100
-1.0
-15
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-0.3
-0.3
DDX
-0.8
Static Electrical Characteristics
0.45
37.5
Typ
100
Typ
140
200
2.5
2.5
3.0
3.0
2.0
7.2
6.0
10
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
0.35V
DDX
DDX
48.75
Max
300
100
1.4
1.0
0.8
Max
10.5
10
15
3.4
4.0
3.7
4.5
1.0
1.2
5.5
5.0
5.0
-
-
-
-
-
10
+0.3
+0.3
-
-
-
DDX
MM912F634
MOhm
kOhm
kOhm
kOhm
Unit
Unit
mV
mV
mA
µA
pF
pF
pF
µA
nF
%
%
V
V
V
V
V
V
V
V
V
V
18
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