IDTAMB0480A5RJ IDT, Integrated Device Technology Inc, IDTAMB0480A5RJ Datasheet - Page 12

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IDTAMB0480A5RJ

Manufacturer Part Number
IDTAMB0480A5RJ
Description
IC MEMORY BUFFER ADV DIMM 655BGA
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDTAMB0480A5RJ

Supply Voltage
1.425 V ~ 1.59 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
*
Operating Temperature (max)
70C
Operating Temperature (min)
0C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Logic Type
-
Number Of Bits
-
Lead Free Status / RoHS Status
Compliant, Contains lead / RoHS non-compliant
Other names
AMB0480A5RJ

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDTAMB0480A5RJ
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDTAMB0480A5RJ
Quantity:
156
Part Number:
IDTAMB0480A5RJ8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
ELECTRICAL, POWER, AND THERMAL
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. The input and output negative-voltage ratings may be exceeded if the input and output
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
Symbol
V
V
V
I
I
I
N/A
V
T
T
INK
OUTK
OUT
J
DD
IN
OUT
STG
CC
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
clamp-current ratings are observed. This value is limited to 2.3V maximum.
(DDR2).
(DDR2)
Supply voltage DRAM Interface
Voltage on any DDR2 interface
pin relative to Vss
Input Clamp Current
(V
Output Clamp Current
(V
Continous Output Current
(V
Continuous current through
each V
Supply voltage for Core
and High Speed Interface
Junction Temperature
Storage Temperature Range
IN
OUT
OUT
< 0 or V
= 0 to V
< 0 or V
DD
Description
or GND
IN
DD
OUT
> V
)
(2)
> V
DD
)
DD
)
Min
-0.5
-0.3
–55
0.5
+1.75
+100
+125
+100
+2.3
+2.3
Max
+30
+30
+30
(1)
Unit
mA
mA
mA
mA
° C
° C
V
V
V
12
ADVANCED MEMORY BUFFER
NORMAL MODE DC ELECTRICAL
PARAMETERS
NOTES:
1. AMB 1.5V voltage regulation as measured at the package Balls.
2. DC defined as 0 KHz to 30 KHz.
3. DC + AC specified as 1.5V +6%, -5% 30KHz to 1 MHz.
4. There is also a +7%, -5% tolerance allowed for current load steps associated with
V
CC
initialization/error-recovery state transitions, such as into and out of EI, IBIST, and
MEMBIST. For these transitions, a temporary voltage overshoot is expected and
acceptable as long as it is within +7% (step transition for 20μs and maximum duty cycle
of 10
-5% tolerance.
link / core
Parameter
-6
V
V
DDSPD
%). Transitions between Active and Idle states are not included in this +7%,
DD
(1,2,3,4)
1.425
Min
1.7
3.0
COMMERCIAL TEMPERATURE RANGE
Typ
1.5
1.8
3.3
Max
1.59
1.9
3.6
Unit
V
V
V

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