K6R4016C1D-UI10T00 Samsung, K6R4016C1D-UI10T00 Datasheet - Page 7

• Manufacturer Part Number: K6R4016C1D-UI10T00
• Description: ram, RAM, Memory, Semiconductors and Actives, bit, speed
• Manufacturer: Samsung

K6R4016C1D
TIMING DIAGRAMS
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width(O E High)
Write Pulse Width(O E Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
Address
CS
UB, LB
O E
Data out
Parameter
Previous Valid Data
High-Z
Symbol
t
t
t
t
t
t
t
t
WHZ
t
t
WP1
t
OW
WC
CW
AW
WP
WR
DW
AS
DH
t
t
BLZ(4,5)
LZ(4,5)
(Address Controlled
(WE=V
t
t
OH
OLZ
PRELIMPreliminaryPPPPPPPPPINARY
IH
t
AA
Min
)
t
10
10
CO
7
0
7
7
0
0
5
0
3
t
- 7 -
t
BA
OE
t
AA
,
CS=OE=V
K6R4016C1D-10
t
RC
t
RC
IL
, WE=V
Valid Data
IH
, UB, LB =V
Max
5
-
-
-
-
-
-
-
-
-
-
IL
Valid Data
)
t
OHZ
CMOS SRAM
t
t
t
BHZ(3,4,5)
HZ(3,4,5)
OH
June 2003
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev 2.0