K6R4016C1D-UI10T00 Samsung, K6R4016C1D-UI10T00 Datasheet - Page 5

• Manufacturer Part Number: K6R4016C1D-UI10T00
• Description: ram, RAM, Memory, Semiconductors and Actives, bit, speed
• Manufacturer: Samsung

K6R4016C1D
RECOMMENDED DC OPERATING CONDITIONS*
*
** V
*** V
DC AND OPERATING CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
The above parameters are also guaranteed at industrial temperature range.
IL
IH
(Min) = -2.0V a.c(Pulse Width
(Max) = V
Parameter
Parameter
C C
+ 2.0V a.c (Pulse Width
Item
(T
A
=25 C, f=1.0MHz)
Symbol
8ns) for I
V
I
V
I
I
I
SB1
I
CC
LO
SB
OH
LI
OL
8ns) for I
V
CS = V
V
Min. Cycle, 100% Duty
CS = V
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
20mA
OL
OH
IN
OUT
IN
Symbol
=8mA
=V
=-4mA
Symbol
V
V
V
V
V
=V
CC
SS
.
IH
IL
SS
IH
IL,
CC
C
C
20mA.
I/O
SS
or O E=V
I N
V
-0.2V or V
to V
IN
to V
=V
CC
I H
CC
CC
PRELIMPreliminaryPPPPPPPPPINARY
IH
or V
-0.2V,
I H
IN
or WE=V
(T
- 5 -
IL,
0.2V
-0.5**
Test Conditions
Test Conditions
A
Min
4.5
2.2
I
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
OUT
0
V
V
=0mA
(T
IL
I/O
IN
=0V
=0V
A
=0 to 70 C)
Typ
5.0
Com.
Ind.
0
-
-
TYP
-
-
10ns
10ns
V
CC
Max
5.5
+0.5***
0.8
0
CMOS SRAM
Max
Min
2.4
-2
-2
8
6
-
-
-
-
-
Max
0.4
65
75
20
2
2
5
-
Unit
June 2003
V
V
V
V
Unit
pF
pF
Rev 2.0
Unit
mA
mA
V
V
A
A