K6R4016C1D-UI10T00 Samsung, K6R4016C1D-UI10T00 Datasheet - Page 4

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K6R4016C1D-UI10T00

Manufacturer Part Number
K6R4016C1D-UI10T00
Description
ram, RAM, Memory, Semiconductors and Actives, bit, speed
Manufacturer
Samsung
Datasheet
K6R4016C1D
PIN FUNCTION
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
PIN CONFIGURATION
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
I/O
Pin Name
A
1
0
V
N.C
WE
V
CS
OE
UB
LB
~ I/O
- A
CC
SS
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Vcc
Vss
WE
17
CS
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
1
2
3
4
5
6
7
8
5
6
7
8
9
16
CC
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
Supply Relative to V
Address Inputs
Write Enable
Chip Select
Output Enable
Lower-byte Control(I/O
Upper-byte Control(I/O
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
Parameter
TSOP2
SOJ/
Commercial
Industrial
(Top View)
SS
Pin Function
SS
4 4
4 3
4 2
4 1
4 0
3 9
3 8
3 7
3 6
3 5
3 4
3 3
3 2
3 1
3 0
2 9
2 8
2 7
2 6
2 5
2 4
2 3
1
9
~I/O
~I/O
A
A
A
OE
UB
LB
I/O
I/O
I/O
I/O
Vss
Vcc
I/O
I/O
I/O
I/O
N.C
A
A
A
A
A
17
16
15
14
13
12
11
10
16
15
14
13
12
11
10
9
8
16
)
)
PRELIMPreliminaryPPPPPPPPPINARY
- 4 -
V
Symbol
IN
T
V
, V
P
T
T
STG
CC
D
A
A
OUT
C
D
G
H
A
B
E
F
I/O1
I/O2
Vss
Vcc
I/O7
I/O8
N.C
LB
1
-0.5 to V
I/O3
I/O4
I/O5
I/O6
N.C
OE
UB
A8
2
-0.5 to 7.0
-65 to 150
-40 to 85
Rating
0 to 70
1.0
48-TBGA
A17
N.C
A14
A12
CC
A0
A3
A5
A9
3
+0.5
A16
A15
A13
A10
A1
A4
A6
A7
4
CMOS SRAM
I/O11
I/O12
I/O13
I/O14
WE
A11
CS
A2
5
Unit
W
I/O10
I/O15
I/O16
V
V
C
C
C
N.C
I/O9
N.C
Vcc
Vss
6
June 2003
Rev 2.0

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