K6R4016C1D-UI10T00 Samsung, K6R4016C1D-UI10T00 Datasheet - Page 3

• Manufacturer Part Number: K6R4016C1D-UI10T00
• Description: ram, RAM, Memory, Semiconductors and Actives, bit, speed
• Manufacturer: Samsung

K6R4016C1D
256K x 16 Bit High-Speed CMOS Static RAM
FEATURES
FUNCTIONAL BLOCK DIAGRAM
WE
OE
UB
LB
CS
• Fast Access Time 10ns(Max.)
• Low Power Dissipation
• Single 5.0V 10
• TTL Compatible Inputs and Outputs
• Fully Static Operation
• Three State Outputs
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration
• Operating in Commercial and Industrial Temperature range.
A
A
A
A
A
A
A
A
A
A
- No Clock or Refresh required
I/O
0
1
2
3
4
5
6
7
8
9
I/O
Standby (TTL)
Operating K6R4016C1D-10 : 65mA(Max.)
1
9
~I/O
~I/O
K6R4016C1D-K : 44-SOJ-400(Lead-Free)
K6R4016C1D-E : 48-TBGA with 0.75 Ball pitch
K6R4016C1D-J : 44-SOJ-400
K6R4016C1D-T : 44-TSOP2-400BF
K6R4016C1D-U : 44-TSOP2-400BF (Lead-Free)
8
16
(CMOS) : 5mA(Max.)
Clk Gen.
(7mm X 9mm)
%
Power Supply
: 20mA(Max.)
Cont.
Cont.
Data
Data
Gen.
CLK
A
10
A
11
Pre-Charge Circuit
256 x 16 Columns
A
Column Select
Memory Array
1 2
I/O Circuit &
1024 Rows
A
13
A
14
A
15
A
16
A
1 7
PRELIMPreliminaryPPPPPPPPPINARY
- 3 -
GENERAL DESCRIPTION
The K6R4016C1D is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 262,144 words by 16 bits.
The K6R4016C1D uses 16 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. Also it allows that lower and upper
byte access by data byte control(UB, LB). The device is fabri-
cated using SAMSUNG s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The K6R4016C1D is packaged in a 400mil 44-pin plastic SOJ
or TSOP(II) forward or 48 T BGA.
CMOS SRAM
June 2003
Rev 2.0