K6R4016C1D-UI10T00 Samsung, K6R4016C1D-UI10T00 Datasheet - Page 6

• Manufacturer Part Number: K6R4016C1D-UI10T00
• Description: ram, RAM, Memory, Semiconductors and Actives, bit, speed
• Manufacturer: Samsung

K6R4016C1D
AC CHARACTERISTICS
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
D
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
* Capacitive Load consists of all components of the
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
OUT
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
=0 to 70 C, V
R
Symbol
L
t
t
t
t
t
t
t
OHZ
t
t
t
t
OLZ
= 50
RC
AA
CO
OE
HZ
OH
PU
PD
LZ
30pF*
V
L
CC
= 1.5V
=5.0V 10%, unless otherwise noted.)
PRELIMPreliminaryPPPPPPPPPINARY
- 6 -
Min
10
3
0
0
0
3
0
-
-
-
-
Output Loads(B)
for t
HZ
* Including Scope and Jig Capacitance
, t
LZ
K6R4016C1D-10
, t
WHZ
, t
OW
D
255
OUT
, t
OLZ
See below
& t
0V to 3V
Value
1.5V
OHZ
3ns
Max
10
10
10
5
5
5
-
-
-
-
-
CMOS SRAM
+5.0V
480
5pF*
June 2003
Unit
Rev 2.0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns