MBRB7HXX VAISH [Vaishali Semiconductor], MBRB7HXX Datasheet - Page 3

• Manufacturer Part Number: MBRB7HXX
• Description: Schottky Barrier Rectifiers
• Manufacturer: VAISH [Vaishali Semiconductor]

Document Number 88796
14-Mar-03
Ratings and
Characteristic Curves
1000
0.01
100
100
0.1
10
10
10
8
6
4
2
0
1
1
0
0.1
0
T
f = 1.0 MH
Vsig = 50mVp-p
T
J
J
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
= 150 C
= 25 C
Fig. 3 – Typical Instantaneous
25
Instantaneous Forward Voltage (V)
Fig. 5 – Typical Junction
Fig. 1 – Forward Current
Forward Characteristics
Z
50
Case Temperature ( C)
Derating Curve
Reverse Voltage (V)
1
Capacitance
75
T
J
= 125 C
(T
100
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
T
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
A
J
= 25°C unless otherwise noted)
= 25 C
10
MBRF
125
MBR, MBRB
150
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
175
100
0.0001
0.001
0.01
175
150
125
100
1.0
0.1
0.1
75
50
25
10
10
1
0.01
1
0
T
Fig. 2 – Maximum Non-Repetitive
Percent of Rated Peak Reverse Voltage (%)
J
= 150 C
Peak Forward Surge Current
Fig. 6 – Typical Transient
20
Fig. 4 – Typical Reverse
T
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
J
= 25 C
Number of Cycles at 60 H
Thermal Impedance
t, Pulse Duration (sec.)
Characteristics
0.1
T
J
= 125 C
40
Vishay Semiconductors
formerly General Semiconductor
T
8.3ms Single Half Sine-Wave
(JEDEC Method)
10
J
= T
60
J
max.
1
Z
80
www.vishay.com
100
100
10
3