SI4856ADY-RC VAISH [Vaishali Semiconductor], SI4856ADY-RC Datasheet

SI4856ADY-RC

Manufacturer Part Number

SI4856ADY-RC

Description

R-C Thermal Model Parameters

Manufacturer

VAISH [Vaishali Semiconductor]

Datasheet

1.SI4856ADY-RC.pdf (3 pages)

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DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient

MOSFET.

R-C THERMAL MODEL FOR TANK CONFIGURATION

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number:74114

Revision 14-Nov-05

R-C VALUES FOR TANK CONFIGURATION

Junction to

Thermal

RT1

RT2

RT3

RT4

CT1

CT2

CT3

CT4

Impedance

R-C Thermal Model Parameters

curves

358.8053 m

24.4894 m

1.6405 m

Ambient

20.8011

28.2729

28.8060

2.0053

2.5583

Thermal Capacitance (Joules/°C)

for

Thermal Resistance (°C/W)

the

R-C values for the electrical circuit in the Foster/Tank

configuration are included. The corresponding values

for the Cauer/Filter configuration are available upon

request.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

Case

N/A

Si4856ADY_RC

Vishay Siliconix

468.2017 m

189.7165 m

39.9180 m

11.7115 m

2.0074 m

4.8276

7.4177

5.9020

Foot

www.vishay.com

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