BUD700D-SMD VAISH [Vaishali Semiconductor], BUD700D-SMD Datasheet

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BUD700D-SMD

Manufacturer Part Number
BUD700D-SMD
Description
Silicon NPN High Voltage Switching Transistor
Manufacturer
VAISH [Vaishali Semiconductor]
Datasheet
Silicon NPN High Voltage Switching Transistor
Features
Applications
Electronic lamp ballast circuits
Absolute Maximum Ratings
T
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Document Number 86505
Rev. 1, 20–Jan–99
D
D
D
D
D
case
Monolithic integrated C-E-free-wheel diode
Simple-sWitch-Off Transistor (SWOT)
HIGH SPEED technology
Planar passivation
100 kHz switching rate
= 25 C, unless otherwise specified
1
Parameter
2
1 Base 2 Collector 3 Emitter
3
BUD700D
g
T
case
94 8964
50 ° C
Test Conditions
D
D
D
D
D
Very low switching losses
Very low dynamic saturation
Very low operating temperature
Optimized RBSOA
High reverse voltage
1 Base 2 Collector 3 Emitter
1
Symbol
www.vishay.de FaxBack +1-408-970-5600
V
V
V
V
BUD700D –SMD
I
P
T
I
CEW
CEO
EBO
CES
CM
BM
I
I
T
stg
C
B
tot
j
3
Vishay Telefunken
–65 to +150
Value
0.75
400
500
700
150
BUD700D
11
20
94 8965
2
3
1
2
Unit
° C
° C
W
V
V
V
V
A
A
A
A
1 (8)

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BUD700D-SMD Summary of contents

Page 1

... Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 1 94 8964 1 Base 2 Collector 3 Emitter Test Conditions 50 ° C case BUD700D Vishay Telefunken 2 94 8965 3 BUD700D –SMD Symbol Value Unit V 400 V CEO V 500 V CEW V 700 V CES EBO ...

Page 2

... BUD700D Vishay Telefunken Maximum Thermal Resistance unless otherwise specified case Parameter Junction case Electrical Characteristics unless otherwise specified case Parameter Transistor Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage I Base-emitter saturation voltage DC forward current transfer ratio ...

Page 3

... (BR)CEO I W (BR)R 100 m Figure 1. Test circuit for V (BR)CE0 – 0 0 BUD700D Vishay Telefunken measure CE V (BR)CEO off www.vishay.de FaxBack +1-408-970-5600 3 (8) ...

Page 4

... BUD700D Vishay Telefunken Typical Characteristics ( 0 < I < 0 < CEsat 100 200 300 V – Collector Emitter Voltage ( V ) 13723 CE Figure 3. V – Diagram CEW 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0. – Collector Emitter Voltage ( V ) 13725 CE Figure 4. I vs. V ...

Page 5

... Rev. 1, 20–Jan–99 0.7 0.6 0.5 0.4 0.3 0.2 0.1 T case 13730 Figure 12. t 0.7 0.6 0.5 0.4 0.3 0.2 0 13732 Figure 13. t www.vishay.de FaxBack +1-408-970-5600 BUD700D Vishay Telefunken saturated switching R-load I = 0.35A 0.04A 125 C case = – vs. – saturated switching R-load I = 0.35A ...

Page 6

... BUD700D Vishay Telefunken Dimensions in mm www.vishay.de FaxBack +1-408-970-5600 6 (8) 14292 Document Number 86505 Rev. 1, 20–Jan–99 ...

Page 7

... For ordering TO 252 add SMD to the type number (i.e. BUD700D –SMD) Document Number 86505 Rev. 1, 20–Jan–99 BUD700D Vishay Telefunken 14293 www.vishay.de FaxBack +1-408-970-5600 7 (8) ...

Page 8

... BUD700D Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

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