BZD27C110P VAISH [Vaishali Semiconductor], BZD27C110P Datasheet
BZD27C110P
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BZD27C110P Summary of contents
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Zener Diodes with Surge Current Specification Features • Sillicon Planar Zener Diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering: 260 °C/10 sec. at terminals • ...
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... BZD27C27P F1 BZD27C30P F2 BZD27C33P F3 BZD27C36P F4 BZD27C39P F5 BZD27C43P F6 BZD27C47P F7 BZD27C51P F8 BZD27C56P F9 BZD27C62P G0 BZD27C68P G1 BZD27C75P G2 BZD27C82P G3 BZD27C91P G4 BZD27C100P G5 BZD27C110P G6 BZD27C120P G7 BZD27C130P G8 BZD27C150P G9 BZD27C160P H0 BZD27C180P H1 BZD27C200P H2 1) Pulse test: tp ≤ 5 ms. www.vishay.com °C unless otherwise noted Differential Working Voltage Resistance ...
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... BZD27C51P 48 BZD27C56P 52 BZD27C62P 58 BZD27C68P 64 BZD27C75P 70 BZD27C82P 77 BZD27C91P 85 BZD27C100P 94 BZD27C110P 104 BZD27C120P 114 BZD27C130P 124 BZD27C150P 138 BZD27C160P 153 BZD27C180P 168 BZD27C200P 188 Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig Document Number 85810 Rev. 1.8, 13-Apr-05 ...
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BZD27C3V6P to BZD27C200P Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10.00 Typ. V Max 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 17411 V – Forward Voltage ( ...
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Package Dimensions in mm (Inches Detail Z enlarged 1.9 (0.074) 1.7 (0.066) 0.10 max ISO Method E 17247 Document Number 85810 Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 0.99 (0.039) 0.97 ...
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BZD27C3V6P to BZD27C200P Vishay Semiconductors Blistertape for SMF www.vishay.com 6 Document Number 85810 Rev. 1.8, 13-Apr-05 ...
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Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems ...