HGTG7N60A4D_05 FAIRCHILD [Fairchild Semiconductor], HGTG7N60A4D_05 Datasheet

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HGTG7N60A4D_05

Manufacturer Part Number
HGTG7N60A4D_05
Description
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.HGTG7N60A4D_05.pdf (9 pages)
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D
HGTP7N60A4D
HGT1S7N60A4DS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-247
TO-220AB
TO-263AB
PACKAGE
C
E
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G7N60A4D
G7N60A4D
G7N60A4D
o
C and 150
BRAND
o
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
C. The
HGTG7N60A4D, HGTP7N60A4D,
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Packaging
www.fairchildsemi.com
January 2005
G
E
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
HGT1S7N60A4DS
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
E
E
C
G
C
G
4,587,713
4,644,637
4,801,986
4,883,767
J
= 125
o
C

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HGTG7N60A4D_05 Summary of contents

Page 1

Data Sheet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of ...

Page 2

Absolute Maximum Ratings T C Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Electrical Specifications PARAMETER Diode Forward Voltage Diode Reverse Recovery Time Thermal Resistance Junction To Case NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer the turn-on ...

Page 4

Typical Performance Curves 30 DUTY CYCLE < 0.5 12V GE PULSE DURATION = 250 150 0.5 1.0 1 COLLECTOR TO EMITTER VOLTAGE (V) ...

Page 5

Typical Performance Curves 180 1mH 160 140 V = 15V 120 V = 12V 100 V = 15V 12V, T ...

Page 6

Typical Performance Curves 1.4 FREQUENCY = 1MHz 1.2 1.0 0.8 C IES 0.6 0.4 C OES 0.2 C RES COLLECTOR TO EMITTER VOLTAGE (V) CE FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 35 ...

Page 7

Typical Performance Curves 0 10 0.5 0.2 0 0.05 0.02 0.01 SINGLE PULSE - FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms L = 1mH R = ...

Page 8

Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate- insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the ...

Page 9

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ ...

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