GS8321E32E-166IV GSI [GSI Technology], GS8321E32E-166IV Datasheet - Page 14

• Manufacturer Part Number: GS8321E32E-166IV
• Description: 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
• Manufacturer: GSI [GSI Technology]

AC Test Conditions
DC Electrical Characteristics
DC Output Characteristics (1.8 V/2.5 V Version)
Rev: 1.04 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
Output reference level
Input reference level
1.8 V Output High Voltage
2.5 V Output High Voltage
1.8 V Output Low Voltage
2.5 V Output Low Voltage
Output Leakage Current
Input Leakage Current
Input high level
Input slew rate
FT, ZZ Input Current
Input low level
(except mode pins)
Parameter
Output load
Parameter
Parameter
Conditions
V
Symbol
Symbol
DD
V
V
V
V
V
1 V/ns
V
Fig. 1
0.2 V
I
DDQ
I
OH1
OH2
I
OL1
OL2
OL
IN
DD
IL
– 0.2 V
/2
/2
14/31
Output Disable, V
I
OH
I
OH
= –8 mA, V
Test Conditions
Test Conditions
= –4 mA, V
V
V
DD
DQ
IN
I
I
OL
OL
≥ V
= 0 to V
= 4 mA
= 8 mA
IN
DDQ
OUT
DDQ
≥ 0 V
DD
= 2.375 V
* Distributed Test Jig Capacitance
= 0 to V
Output Load 1
= 1.6 V
Figure 1
DD
V
DDQ/2
GS8321E18/32/36E-xxxV
50Ω
V
DDQ
–100 uA
© 2003, GSI Technology
–1 uA
–1 uA
1.7 V
Min
Min
—
—
– 0.4 V
30pF
*
100 uA
Max
Max
0.4 V
0.4 V
1 uA
1 uA
—
—