S71AL016D SPANSION [SPANSION], S71AL016D Datasheet - Page 68

• Manufacturer Part Number: S71AL016D
• Description: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
• Manufacturer: SPANSION [SPANSION]

Capacitance
Note: Tested initially and after any design or process changes that may affect these parameters.
AC Test Loads and Waveforms
Data Retention Characteristics (Over the Operation Range)
Notes:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
2. Tested initially and after any design or process changes that may affect these parameters.
3. Full Device AC operation requires linear V
68
V
I
t
t
C
C
CCDR
CDR
R
DR
IN
OUT
(note 3)
V
Parameter
CC(typ.)
(note 2)
, T
Parameter
Equivalent to:
A
OUTPUT
= 25°C.
V
INCLUDING
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
CC
Parameters
JIG AND
SCOPE
for Data Retention
30 pF
OUTPUT
R
V
R1
R2
TH
TH
R1
THÉ VENIN EQUIVALENT
Description
Output Capacitance
Input Capacitance
Figure 1. AC Test Loads and Waveforms
R2
Description
16.6
15.4
1.20
2.5V
R
8
CC
Rise Time: 1 V/ns
T H
ramp from V
V
2Mbit Type 2 SRAM
CC
V
GND
TH
Typ
P r e l i m i n a r y
DR
1.105
1.550
0.645
V
1.75
3.0V
CC
to V
10%
= 1.5V CE# ≥ V
CC(min.)
T
A
Conditions
= 25°C, f = 1 MHz,
V
Test Condition
ALL INPUT PULSES
CC
90%
> 100 ms or stable at V
= V
1.216
1.374
0.645
CC(typ.)
1.75
3.3V
CC
– 0.2V
90%
Min.
1.5
t
10%
0
RC
Fall Time: 1 V/ns
K Ohms
Volts
Unit
CC(min.)
(note 1)
SRAM_Type04_04A0 August 4, 2004
Typ
1
Max
6
8
> 100 ms.
V
Max.
CCMAX
4
CC
Unit
pF
=
Unit
µA
ns
V