S71WS512NB0BAEZZ0 SPANSION [SPANSION], S71WS512NB0BAEZZ0 Datasheet - Page 76
S71WS512NB0BAEZZ0
Manufacturer Part Number
S71WS512NB0BAEZZ0
Description
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S71WS512NB0BAEZZ0.pdf
(142 pages)
- Current page: 76 of 142
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DC Characteristics
Note:
1. Maximum I
2. V
3. The I
4. I
5. Device enters automatic sleep mode when addresses are stable for t
6. Total current during accelerated programming is the sum of V
7. CE# must be set high when measuring the RDY pin.
76
Parameter
CC
V
I
I
I
I
I
I
I
I
CC
I
V
V
V
V
I
V
I
CCB
CC1
CC2
CC3
CC4
CC5
CC6
ACC
IO1
LKO
LO
OH
HH
LI
OL
IH
IL
= V
active while Embedded Erase or Embedded Program is in progress.
CC
CMOS Compatible
IO
current listed is typically less than 3 mA/MHz, with OE# at V
Description
V
CC
CC
V
Output Leakage Current (Note 7)
Voltage for Accelerated Program
specifications are tested with V
CC
Active Asynchronous Read Current
V
V
Accelerated Program Current
CC
CC
Low V
Active Write Current
V
Active burst Read Current
Standby Current
Output High Voltage
IO
Output Low Voltage
Input Load Current
(Read While Write)
V
Input High Voltage
V
V
Input Low Voltage
CC
CC
CC
Non-active Output
CC
Active Current
Reset Current
Sleep Current
(Note 3)
(Note 6)
Lock-out Voltage
S29WSxxxN MirrorBit™ Flash Family For Multi-chip Products (MCP) S71WS512NE0BFWZZ_00_ A1 June 28, 2004
(Note 5)
(Note 4)
CC
A d v a n c e
Test Conditions
WE# = V
WE# = V
WE# = V
WE# = V
= V
I
CE# = V
CE# = V
CE# = V
CE# = V
CE# = V
CE# = V
CE# = V
I
OH
V
CE# = V
OL
V
OUT
IN
CE# = RESET# =
CC
= –100 µA, V
= 100 µA, V
= V
RESET# = V
V
max.
V
= V
Continuous
WE# = V
ACC = V
CE# = V
ACC
CC
IH
IH
IH
IH
SS
IL
IL
IL
IL
IL
IL
IL
, burst length =
, burst length =
, burst length =
, burst length =
IL
SS
± 0.2 V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
16
32
, OE# = V
= 9.5 V
, OE# = V
8
to V
V
V
OE# = V
to V
IO
IO
ACC
IH
IL
(Note: 1
IH
CC
= 1.8 V
= 1.8 V
CC
CC
, OE# = V
CC
I n f o r m a t i o n
IL,
, V
, V
and V
= V
= V
ACC
CLK = V
CC
IH
IH
IH
IH
IH
IH
IH,
IH
IH
CC
IH
,
,
,
,
,
,
CC min
, ACC = V
= V
CC min
& 2)
.
= V
+ 20ns. Typical sleep mode current is equal to I
CC
IH
CC
54 MHz
66 MHz
54 MHz
66 MHz
54 MHz
66 MHz
54 MHz
66 MHz
10 MHz
CC
5 MHz
1 MHz
IL
currents.
V
V
V
= V
max
V
V
V
= V
max
ACC
ACC
ACC
CC
CC
CC
IH
IO
IO
V
V
IO
IO
–0.5
Min
8.5
1.0
– 0.1
– 0.4
<35
<50
<30
<15
Typ
36
40
32
36
28
32
24
28
20
30
15
20
20
20
3
1
1
V
IO
<52.5
<60
<20
<20
Max
0.4
0.1
9.5
1.4
±1
±1
54
60
48
54
42
48
36
42
30
36
18
30
30
30
+ 0.4
4
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
CC3
V
V
V
V
V
.
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