S71WS512NB0BAEZZ0 SPANSION [SPANSION], S71WS512NB0BAEZZ0 Datasheet - Page 108
S71WS512NB0BAEZZ0
Manufacturer Part Number
S71WS512NB0BAEZZ0
Description
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
Manufacturer
SPANSION [SPANSION]
Datasheet
1.S71WS512NB0BAEZZ0.pdf
(142 pages)
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ABSOLUTE MAXIMUM RATINGS (See WARNING below.)
WARNING:
RECOMMENDED OPERATING CONDITIONS (See WARNING below.)
Notes
WARNING:
108
(Referenced to V
Voltage of V
Voltage of V
Voltage at Any Pin Relative to V
Short Circuit Output Current
Storage Temperature
Supply Voltage
DQ Supply Voltage
Ground
High Level Input Voltage
Low Level Input Voltage
Ambient Temperature
*1: Maximum DC voltage on input and DQ pins are V
*2: Minimum DC voltage on input or DQ pins are -0.3V. During voltage transitions, inputs may negative
overshoot to V
overshoot V
Always use semiconductor devices within the recommended operating conditions. Operation outside these
ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on the
data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU
representative beforehand.
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Parameter
Recommended operating conditions are normal operating ranges for the semiconductor device. All the
device’s electrical characteristics are warranted when operated within these ranges.
DD
DDQ
Supply Relative to V
Parameter
Supply Relative to V
SS
SS
)
DDQ
to -1.0V for periods of up to 5ns.
+1.0V for periods of up to 5 ns.
SS
Notes
SS
SS
*1
*2
128Mb pSRAM
V
Symbol
P r e l i m i n a r y
IN
V
T
I
V
, V
OUT
DDQ
STG
DD
Symbol
V
DDQ
OUT
V
V
V
V
DDQ
T
DD
SS
IH
IL
A
+0.2V. During voltage transitions, inputs may positive
-0.5 to +3.6
-0.5 to +2.6
-0.5 to +2.6
V
-55 to +125
DDQ
Min.
1.65
-0.3
2.6
-30
Value
0
+50
*0.8
S71WS512NE0BFWZZ_00_A1 June 28, 2004
V
V
DDQ
DDQ
Max.
1.95
3.1
85
0
+0.2
*0.2
Unit
mA
o
V
V
V
C
Unit
°C
V
V
V
V
V
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