HUF75344G3_04 FAIRCHILD [Fairchild Semiconductor], HUF75344G3_04 Datasheet - Page 4

• Manufacturer Part Number: HUF75344G3_04
• Description: 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
1000
150
120
90
60
30
100
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
10
0
1
0
2000
1000
100
1
FIGURE 7. SATURATION CHARACTERISTICS
50
V
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
10
DSS(MAX)
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
V
DS
DS
V
1
= 55V
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS(ON)
V
GS
= 10V
= 20V
V
GS
V
10
V
10
GS
GS
= 6V
-4
V
2
= 7V
GS
= 10V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
= 20V
(Continued)
T
T
T
J
C
C
= MAX RATED
= 25
FIGURE 4. PEAK CURRENT CAPABILITY
= 25
3
100 s
1ms
10ms
10
o
o
V
C
C
GS
100
-3
= 5V
200
4
t, PULSE WIDTH (s)
10
-2
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
1000
100
150
120
10
90
60
30
0.01
0
0
If R = 0
t
If R
t
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
AV
AV
STARTING T
FIGURE 8. TRANSFER CHARACTERISTICS
DD
= (L)(I
= (L/R)ln[(I
= 15V
0
T
C
10
AS
1.5
= 25
V
-1
GS
)/(1.3*RATED BV
J
t
AS
AV
o
, GATE TO SOURCE VOLTAGE (V)
= 150
C
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
0.1
HUF75344G3, HUF75344P3, HUF75344S3S Rev. B2
o
C
3
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
o
DSS
25
C
STARTING T
10
- V
o
0
4.5
C DERATE PEAK
DSS
DD
175 - T
)
1
-55
150
- V
J
o
DD
C
= 25
C
) +1]
6
o
C
10
1
7.5
10