HUF75332G3_05 FAIRCHILD [Fairchild Semiconductor], HUF75332G3_05 Datasheet - Page 3

• Manufacturer Part Number: HUF75332G3_05
• Description: 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Electrical Specifications
Source to Drain Diode Specifications
Typical Performance Curves
©2005 Fairchild Semiconductor Corporation
CAPACITANCE SPECIFICATIONS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
2
1
10
TEMPERATURE
PARAMETER
-5
25
PARAMETER
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
C
50
, CASE TEMPERATURE (
SINGLE PULSE
75
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10
T
-4
C
= 25
100
o
C, Unless Otherwise Specified
125
SYMBOL
o
SYMBOL
C)
C
C
C
Q
V
OSS
RSS
ISS
t
SD
RR
rr
10
150
-3
t, RECTANGULAR PULSE DURATION (s)
V
f = 1MHz
(Figure 12)
I
I
I
DS
SD
SD
SD
175
= 25V, V
= 60A
= 60A, dI
= 60A, dI
TEST CONDITIONS
TEST CONDITIONS
GS
SD
SD
10
/dt = 100A/ s
/dt = 100A/ s
= 0V,
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
80
60
40
20
0
25
CASE TEMPERATURE
50
10
-1
T
C
, CASE TEMPERATURE (
75
NOTES:
DUTY FACTOR: D = t
PEAK T
HUF75332G3, HUF75332P3, HUF75332S3S Rev. B1
MIN
-
-
-
MIN
-
-
-
J
100
= P
DM
TYP
10
1300
-
-
-
TYP
480
115
0
x Z
P
DM
125
JC
1
/t
o
x R
2
MAX
C)
1.25
MAX
140
t
75
1
-
-
-
t
JC
2
150
+ T
C
UNITS
UNITS
10
nC
pF
pF
pF
ns
V
1
175