IRF840B_05 FAIRCHILD [Fairchild Semiconductor], IRF840B_05 Datasheet

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IRF840B_05

Manufacturer Part Number
IRF840B_05
Description
500V N-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.IRF840B_05.pdf (10 pages)
©2005 Fairchild Semiconductor Corporation
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 8.0A, 500V, R
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
IRFS Series
IRF840B
IRF840B
1.08
0.93
62.5
DS(on)
134
8.0
5.1
0.5
32
-55 to +150
= 0.8
13.4
500
320
300
8.0
5.5
30
@V
G
IRFS840B
IRFS840B
0.35
2.86
62.5
GS
8.0
5.1
32
44
--
= 10 V
February 2005
D
S
Rev. B, February 2005
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
A
A
A
V
A
V

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IRF840B_05 Summary of contents

Page 1

IRF840B/IRFS840B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS / T Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse GSSR On ...

Page 3

Typical Characteristics V GS Top : 15.0 V 10.0 V 8 6.5 V 6.0 V 5.5 V Bottom : 5 Drain-Source Voltage [V] DS ...

Page 4

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area Limited by R DS(on ...

Page 5

Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF840B D ...

Page 6

3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & ...

Page 7

Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( ...

Page 8

Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2005 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in ...

Page 9

Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2005 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions ...

Page 10

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ GlobalOptoisolator™ CROSSVOLT™ ...

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