HUFA75344G3_04 FAIRCHILD [Fairchild Semiconductor], HUFA75344G3_04 Datasheet

HUFA75344G3_04

Manufacturer Part Number

HUFA75344G3_04

Description

75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

Manufacturer

FAIRCHILD [Fairchild Semiconductor]

Datasheet

1.HUFA75344G3_04.pdf (10 pages)

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75A, 55V, 0.008 Ohm, N-Channel UltraFET

Power MOSFETs

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75344.

Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST.

Packaging

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

HUFA75344G3

HUFA75344P3

HUFA75344S3S

HUFA75344S3

PART NUMBER

DRAIN

(TAB)

TO-247

TO-220AB

TO-263AB

TO-262AA

GATE

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

advanced process technology

PACKAGE

SOURCE

TO-247

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com

TO-263AB

Data Sheet

HUFA75344G3, HUFA75344P3, HUFA75344S3S,

SOURCE

75344G

75344P

75344S

(FLANGE)

DRAIN

BRAND

GATE

Features

• 75A, 55V

• Simulation Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

Symbol

- Temperature Compensated PSPICE® and SABER™

- Thermal Impedance PSPICE and SABER Models

- TB334, “Guidelines for Soldering Surface Mount

Models

Available on the web at: www.fairchildsemi.com

Components to PC Boards”

December 2004

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B3

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

TO-262AA

TO-220AB

DRAIN

HUFA75344S3

GATE

DRAIN

SOURCE

Related parts for HUFA75344G3_04

HUFA75344G3_04 Summary of contents

Page 1

HUFA75344G3, HUFA75344P3, HUFA75344S3S, Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. ...

Page 2

Absolute Maximum Ratings T Drain to Source Voltage (Note ...

Page 3

Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge Typical Performance Curves 1.2 1.0 0.8 0.6 0.4 0 100 T , CASE TEMPERATURE ( C FIGURE 1. ...

Page 4

Typical Performance Curves 2000 1000 V = 20V 10V GS TRANSCONDUCTANCE 100 MAY LIMIT CURRENT IN THIS REGION 1000 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON) V ...

Page 5

Typical Performance Curves 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V 75A GS D 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J FIGURE 9. NORMALIZED ...

Page 6

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT G(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT V GS ...

Page 7

PSPICE Electrical Model .SUBCKT HUFA75337 rev 3 Feb 1999 4.9e 4.75e-9 CIN 6 8 2.85e-9 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 ...

Page 8

SABER Electrical Model REV 3 February 1999 template HUFA75344 n2, n1, n3 electrical n2, n1 var i iscl d..model dbodymod = (is = 2.95e-12, cjo = 5.19e- 5.90e- 0.55) d..model dbreakmod = () d..model ...

Page 9

SPICE Thermal Model REV 5 February 1999 HUFA75344 CTHERM1 th 6 5.0e-3 CTHERM2 6 5 1.0e-2 CTHERM3 5 4 1.3e-2 CTHERM4 4 3 1.5e-2 CTHERM5 3 2 2.2e-2 CTHERM6 2 tl 8.5e-2 RTHERM1 th 6 6.0e-4 RTHERM2 6 5 3.5e-3 ...

Page 10

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ ...

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