FSB660_01 FAIRCHILD [Fairchild Semiconductor], FSB660_01 Datasheet

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FSB660_01

Manufacturer Part Number
FSB660_01
Description
PNP Low Saturation Transistor
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FSB660_01.pdf (4 pages)
Symbol
V
V
V
I
T
Absolute Maximum Ratings*
P
R
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
C
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
J,
CEO
CBO
EBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
Symbol
D
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JA
T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
SuperSOT
FSB660 / FSB660A
C
Parameter
TM
-3 (SOT-23)
Characteristic
B
T
A = 25°C unless otherwise noted
E
T
A = 25°C unless otherwise noted
FSB660/FSB660A
-55 to +150
FSB660/FSB660A
60
60
5
2
Max
500
250
FSB660/FSB660A Rev. B1
Units
Units
°C/W
°C
mW
V
V
V
A

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FSB660_01 Summary of contents

Page 1

FSB660 / FSB660A C TM SuperSOT PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents continuous. Absolute Maximum Ratings* Symbol Parameter Collector-Emitter Voltage V CEO Collector-Base Voltage ...

Page 2

PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BV CEO Collector-Base Breakdown Voltage BV CBO Emitter-Base Breakdown Voltage BV EBO Collector Cutoff Current I CBO Emitter Cutoff Current I EBO ON CHARACTERISTICS* DC Current ...

Page 3

Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1.4 1 40°C 0.8 25°C 0.6 125°C 0.4 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Collector-Emitter Saturation Voltage vs Collector Current 0.8 0.7 0.6 0.5 0.4 0.3 ...

Page 4

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ HiSeC™ ...

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