AM29PDL640G AMD [Advanced Micro Devices], AM29PDL640G Datasheet - Page 57

• Manufacturer Part Number: AM29PDL640G
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
• Manufacturer: AMD [Advanced Micro Devices]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
BGA BALL CAPACITANCE
Notes:
1.
2. Test conditions T
DATA RETENTION
December 13, 2005
Parameter
Sector Erase Time
Chip Erase Time
Word Program Time
Accelerated Word Program Time
Chip Program Time (Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 14 for further information on command definitions.
Sampled, not 100% tested.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Description
Control Pin Capacitance
Parameter Description
SS
SS
CC
Output Capacitance
Input Capacitance
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
D A T A S H E E T
Typ (Note 1)
CC
Am29PDL640G
= 3.0 V, one pin at a time.
0.4
56
28
7
4
Max (Note 2)
210
120
84
5
Test Setup
V
V
V
OUT
Test Conditions
IN
IN
–100 mA
–1.0 V
–1.0 V
= 0
= 0
Min
= 0
CC
150°C
125°C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
Typ
overhead (Note 5)
4.2
5.4
3.9
Comments
V
+100 mA
CC
Min
13 V
Max
10
20
Max
+ 1.0 V
5.0
6.5
4.7
Years
Years
Unit
Unit
pF
pF
pF
55