AM29PDL640G AMD [Advanced Micro Devices], AM29PDL640G Datasheet - Page 43

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AM29PDL640G

Manufacturer Part Number
AM29PDL640G
Description
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
2. Maximum I
3. I
December 13, 2005
Parameter
Symbol
The I
V
progress.
V
I
I
I
I
I
I
I
I
V
V
V
CC
I
V
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CC8
I
IH
LIT
LO
LKO
LI
HH
OH
OL
IH
ID
IL
.
active while Embedded Erase or Embedded Program is in
CC
current listed is typically less than 2 mA/MHz, with OE# at
Input Load Current
A9, OE#, RESET# Input Load Current
Output Leakage Current
V
V
V
V
Automatic Sleep Mode (Notes 2, 4)
V
(Notes 1, 2)
V
(Notes 1, 2)
V
Suspended Current (Notes 2, 5)
Input Low Voltage
Input High Voltage
Voltage for ACC Program Acceleration
Voltage for Autoselect and Temporary
Sector Unprotect
Output Low Voltage
Output High Voltage
Low V
CC
CC
CC
CC
CC
CC
CC
CC
specifications are tested with V
Active Read Current (Notes 1, 2)
Active Write Current (Notes 2, 3)
Standby Current (Note 2)
Reset Current (Note 2)
Active Read-While-Program Current
Active Read-While-Erase Current
Active Program-While-Erase-
CC
Lock-Out Voltage (Note 5)
Parameter Description
CC
= V
CCmax
D A T A S H E E T
V
V
V
V
V
CE# = V
= V
CE# = V
CE#, RESET#, WP#/ACC = V
RESET# = V
V
V
CE# = V
CE# = V
CE# = V
V
V
V
V
V
V
I
I
I
V
I
OL
OL
OH
OH
IN
CC
CC
OUT
CC
IH
IL
IO
IO
IO
IO
CC
CC
IO
.
= V
= 100 µA, V
= 4.0 mA, V
CC max
= V
= V
= –100 µA, V
= –2.0 mA, V
= 1.65–1.95 V
= 2.7–3.1 V
= 1.65–1.95 V
= 2.7–3.1 V
= 1.65–1.95 V
Am29PDL640G
= V
= V
= V
= 3.0 V ± 10%
= 3.0 V ± 10%
= V
SS
SS
IO
CC max
CC max
CC max
IL
IL
IL
IL
IL
SS
± 0.3 V;
± 0.3 V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
, OE# = V
to V
to V
SS
; V
CC
Test Conditions
CC
CC
± 0.3 V
CC
,
ID
CC
CC
, OE# = V
= V
= 12.5 V
4. Automatic sleep mode enables the low power mode when
5. Not 100% tested.
= V
IH
IH
IH
IH
IH
= V
= V
, V
, WE# = V
CC min
CC min
addresses remain stable for t
current is 200 nA.
CC min
CC min
CC
, V
, V
IH
,
, V
IO
IO
IO
IO
IL
= 1.65–1.95 V
= 2.7–3.1 V
± 0.3 V
10 MHz
= 2.7–3.1 V
5 MHz
Word
Word
V
V
11.5
–0.4
–0.5
IO
IO
Min
8.5
2.4
2.3
ACC
2
–0.4
–0.1
+ 30 ns. Typical sleep mode
Typ
10
25
15
21
21
17
1
1
1
V
V
CC
Max
±1.0
±1.0
IO
12.5
0.4
0.8
9.5
0.1
0.4
2.5
35
20
45
30
45
45
35
5
5
5
+0.4
+0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
41

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