AM29PDL640G AMD [Advanced Micro Devices], AM29PDL640G Datasheet - Page 3

• Manufacturer Part Number: AM29PDL640G
• Description: 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
• Manufacturer: AMD [Advanced Micro Devices]

Am29PDL640G
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only,
Simultaneous Read/Write Flash Memory with Enhanced
VersatileIO
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARACTERISTICS
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
This product has been retired and is not available for designs. For new and current designs, S29PL064J supersedes Am29PDL640G and is the factory-recommended migration path. Please
refer to the S29PL064J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
64 Mbit Page Mode device
— Page size of 8 words: Fast page read access from
Single power supply operation
— Full Voltage range: 2.7 to 3.1 volt read, erase, and
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
— Zero latency switching from write to read operations
FlexBank Architecture
— 4 separate banks, with up to two simultaneous
— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)
— Bank B: 24 Mbit (32 Kw x 48)
— Bank C: 24 Mbit (32 Kw x 48)
— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
Enhanced VersatileI/O
— Output voltage generated and input voltages tolerated
SecSi
— Up to 128 words accessible through a command
Both top and bottom boot blocks in one device
Manufactured on 0.17 µm process technology
20-year data retention at 125°C
Minimum 1 million erase cycle guarantee per sector
High Performance
— Page access times as fast as 25 ns
— Random access times as fast as 65 ns
Power consumption (typical values at 10 MHz)
— 25 mA active read current
— 15 mA program/erase current
— 0.2 µA typical standby mode current
random locations within the page
program operations for battery-powered applications
executing erase/program functions in another bank
operations per device
on all control inputs and I/Os is determined by the
voltage on the V
sequence
TM
(Secured Silicon) Sector region
TM
Control
IO
pin
Refer to AMD’s Website (www.amd.com) for the latest information.
TM
(V
IO
) Control
SOFTWARE FEATURES
HARDWARE FEATURES
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system,
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or
Unlock Bypass Program command
— Reduces overall programming time when issuing
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
WP#/ACC (Write Protect/Accelerate) input
— At V
— At V
— At V
Persistent Sector Protection
— A command sector protection method to lock
— Sectors can be locked and unlocked in-system at V
Password Sector Protection
— A sophisticated sector protection method to lock
Package options
— 63-ball Fine-pitch BGA
— 80-ball Fine-pitch BGA
families
allowing host software to easily reconfigure for
different Flash devices
program operations in other sectors of same bank
multiple program command sequences
erase cycle completion
data
regardless of sector protect/unprotect status
setting
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector
level
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-defined 64-bit password
HH
IL
IH
, protects the first and last two 4K word sectors,
, allows removal of sector protection
, provides faster programming times in a factory
Publication# 26573
Issue Date: December 13, 2005
Rev: B Amendment/+2
CC