TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 32
TE28F008xxx
Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
1.TE28F008XXX.pdf
(58 pages)
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
26
Figure 7. AC Waveform: Read Operations
ADDRESSES (A)
AC Characteristics, Continued
NOTES:
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
DATA (D/Q)
R10
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
See
See
allowable input slew rate.
WE# (W)
OE# (G)
CE# (E)
RP# (P)
Figure 7
Figure 5, “Input/Output Reference Waveform” on page 22
t
t
t
t
t
t
t
t
t
Sym
GHQZ
AVQV
GLQV
PHQV
GLQX
EHQZ
ELQV
ELQX
AVAV
t
OH
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
for the AC waveform for read operations.
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from Address, CE#, or
OE# Change, Whichever Occurs First
Standby
Parameter
High Z
ELQV–
R5
R6
t
GLQV
Address Selection
Address Stable
R7
Device
R2
after the falling edge of CE# without impact on t
Product
Density
R4
R3
V
Valid Output
CC
R1
Data Valid
Note
2
2
2
1
1
2
2
for timing measurements and maximum
Min
2.7 V–3.6 V
R10
90
0
0
0
90 ns
Max
150
90
90
20
20
20
64 Mbit
Min
100
2.7 V–3.6 V
0
0
0
100 ns
ELQV
R8
R9
High Z
.
Max
100
100
150
20
20
20
3UHOLPLQDU\
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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