TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 31

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TE28F008xxx

Manufacturer Part Number
TE28F008xxx
Description
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
Manufacturer
Intel Corporation
Datasheet
3UHOLPLQDU\
R10
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
t
t
t
t
t
t
t
t
t
Sym
GHQZ
AVQV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
AVAV
t
OH
Read Cycle Time
Address to Output
Delay
CE# to Output
Delay
OE# to Output
Delay
RP# to Output
Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever Occurs
First
meter
Para-
AC Characteristics, Continued
NOTES:
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
(2)
See
See
allowable input slew rate.
(1)
(1)
(2)
(2)
(2)
(2)
Figure 7, “AC Waveform: Read Operations” on page
Figure 5, “Input/Output Reference Waveform” on page 22
Product
Density
V
CC
2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.3 V 2.7 V–3.3 V 3.0 V–3.3 V 2.7 V–3.3 V
Min
70
0
0
0
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
70 ns
Max
150
70
70
20
20
20
ELQV–
Min
90
0
0
0
t
90 ns
GLQV
Max
150
90
90
20
20
20
after the falling edge of CE# without impact on t
Min
90
0
0
0
Max
600
90
90
30
25
25
32 Mbit
100 ns
26.
Min
100
0
0
0
for timing measurements and maximum
Max
100
100
600
30
25
25
Min
100
0
0
0
Max
100
100
600
30
25
25
110 ns
ELQV
Min
110
0
0
0
.
Max
600
110
110
30
25
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
25

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