TE28F008xxx Intel Corporation, TE28F008xxx Datasheet - Page 26

• Manufacturer Part Number: TE28F008xxx
• Description: (TE28F Series) 3 Volt Advanced Boot Block Flash Memory
• Manufacturer: Intel Corporation

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.4
20
I
I
I
I
I
I
I
I
I
LI
LO
CCS
CCD
CCR
PPD
PPR
CCW+
PPW
Sym
Input Load Current
Output Leakage Current
V
0.18 Micron Product
V
0.25 Micron and
0.4 Micron Product
V
for 0.18 Micron Product
V
for 0.25 Micron and
0.4 Micron Product
V
0.18 Micron Product
V
0.25 and 0.4 Micron
Product
V
Current
V
V
Current for 0.18 Micron
Product
V
Current for 0.25 Micron
and 0.4 Micron Product
CC
CC
CC
CC
CC
CC
PP
PP
CC
CC
Power-Down Current
Power-Down Current
Deep Power-Down
Read Current
Standby Current for
Standby Current for
Read Current for
Read Current for
+ V
+ V
DC Characteristics
Parameter
PP
PP
Program
Program
V
Note
1,2,3
1,2,3
1,2,4
1,2,4
V
1,2
1,2
1,2
1,2
1,2
1,2
1,4
CCQ
CC
2.7 V–3.6 V
2.7 V–3.6 V
Typ
0.2
18
10
50
18
18
10
7
7
7
9
2
8
Max
200
15
35
15
25
18
18
55
15
55
30
5
15
10
1
2.7 V–2.85 V
1.65 V–2.5 V
Typ
0.2
20
20
50
18
10
18
10
7
7
8
8
2
Max
200
50
50
20
25
15
15
55
30
55
30
5
15
10
1
2.7 V–3.3 V
1.8 V–2.5 V
Typ
150
150
0.2
50
18
10
18
10
9
7
7
9
2
Max
250
250
200
20
25
15
15
55
30
55
30
5
15
10
1
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
CE# = RP# = V
or during Program/
Erase Suspend
WP# = V
V
V
V
RP# = GND ± 0.2 V
V
V
OE# = V
f = 5 MHz, I
Inputs = V
RP# = GND ± 0.2 V
V
V
V
V
Program in Progress
V
Program in Progress
V
Program in Progress
V
Program in Progress
CC
CCQ
IN
CC
CCQ
IN
CC
CC
CCQ
IN
CC
CCQ
PP
PP
PP
PP
PP
PP
PP
Test Conditions
= V
= V
= V
> V
= V
= V
=V
=V
= V
= V
= V
= V
= V
= V
= V
= V
= V
V
V
CCQ
CCQ
CCQ
PP1, 2, 3
PP1, 2, 3
CC
CC
CC
PP4
PP4
CC
CC
CC
CC
CC
IH
CCQ
CCQ
CCQ
CCQ
CCQ
IL
Max
Max
Max
Max
Max
, CE# =V
OUT
or GND
or GND
or GND
3UHOLPLQDU\
or V
Max
Max
or GND
Max
Max
CCQ
=0 mA
IH
IL