IRFR1111 IRF [International Rectifier], IRFR1111 Datasheet - Page 7

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IRFR1111

Manufacturer Part Number
IRFR1111
Description
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?)
Manufacturer
IRF [International Rectifier]
Datasheet
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
IRFR/U3303
=10V
+
-
V
DD
*

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