IRFR1111 IRF [International Rectifier], IRFR1111 Datasheet
IRFR1111
Related parts for IRFR1111
IRFR1111 Summary of contents
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Ultra Low On-Resistance Surface Mount (IRFR3303) Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...
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IRFR/U3303 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 0.1 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° 150 ° ...
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IRFR/U3303 1400 iss 1200 rss oss ds 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) ...
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LIMITED BY PACKAGE 100 T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 SINGLE PULSE ...
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IRFR/U3303 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...
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Peak Diode Recovery dv/dt Test Circuit + D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...
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IRFR/U3303 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) ...
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Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250 5.46 (.215) 5.21 (.205) 4 1.52 ( .060) 1.15 ( .045 2.28 (.090) 1.91 (.075) 1.14 (.045) ...
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IRFR/U3303 Tape & Reel Information TO-252AA ...