IRF9952QPBF_10 IRF [International Rectifier], IRF9952QPBF_10 Datasheet

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IRF9952QPBF_10

Manufacturer Part Number
IRF9952QPBF_10
Description
HEXFETPOWERMOSFET
Manufacturer
IRF [International Rectifier]
Datasheet
www.irf.com
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These HEXFET
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in a Dual SO-8
G2
G1
S2
S1
I
P
D
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
D
Top View
θ
8
6
5
7
D1
D1
D2
D2
SO-8
DS(on)
DSS
V
1

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IRF9952QPBF_10 Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss  ‚ N-Channel I ≤ ≤ SD ≤ ≤ P-Channel I SD ƒ N-Channel P-Channel ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 25° 150° ...

Page 4

I = 2.2A D 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0. ...

Page 5

1MHz iss 300 rss oss ds gd 250 C iss C oss 200 150 C rss 100 ...

Page 6

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3. 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS 100 10 ...

Page 7

1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.80 0.60 0.40 0.20 0. Gate-to-Source ...

Page 8

1MHz iss rss oss ds gd 300 C iss C oss 200 C rss 100 0 1 ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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