IRFR4615TRPBF IRF [International Rectifier], IRFR4615TRPBF Datasheet

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IRFR4615TRPBF

Manufacturer Part Number
IRFR4615TRPBF
Description
HEXFET Power MOSFET
Manufacturer
IRF [International Rectifier]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR4615TRPBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
l
l
Benefits
l
l
l
l
www.irf.com
Notes  through
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
DM
AR
D
GS
J
STG
AS (Thermally limited)
AR
θJC
θJA
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
ˆ
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
are on page 11
Parameter
Parameter
j
e
GS
GS
@ 10V
@ 10V
d
i
G
Gate
G
D
S
IRFR4615PbF
IRFU4615PbF
D
IRFR4615PbF
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
–––
DPak
V
R
I
D
DSS
DS(on)
-55 to + 175
G
Max.
0.96
HEXFET Power MOSFET
140
144
± 20
300
109
S
Drain
33
24
38
D
typ.
max.
D
IRFU4615PbF
Max.
1.045
110
50
IPAK
G
D
S
34m
42m
Source
150V
33A
S
Units
Units
96206A
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
06/08/09
1

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IRFR4615TRPBF Summary of contents

Page 1

Applications High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Benefits Improved Gate, Avalanche and Dynamic dV/dt l Ruggedness Fully Characterized Capacitance and Avalanche l SOA ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 4

175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, ...

Page 6

100µA 3 250uA ID = 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ...

Page 7

D.U.T + ƒ ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 ...

Page 8

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 ,5)5 $   ,5)5   www.irf.com ...

Page 9

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 5 ,5)8   ,5)8 $   9 ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

... Orderable part number IRFR4615PbF IRFR4615TRPbF IRFU4615PbF † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: † ...

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