IRFR1111 IRF [International Rectifier], IRFR1111 Datasheet - Page 2

• Manufacturer Part Number: IRFR1111
• Description: Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?)
• Manufacturer: IRF [International Rectifier]

IRFR/U3303
Electrical Characteristics @ T
Notes:
Source-Drain Ratings and Characteristics
I
I
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
V
fs
D
S
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
SD
rr
(BR)DSS
Repetitive rating; pulse width limited by
Starting T
R
max. junction temperature. ( See fig. 11 )
T
For recommended footprint and soldering techniques refer to application note #AN-994
J
G
= 25 , I
150°C
18A, di/dt
/ T
J
J
Drain-to-Source Leakage Current
= 25°C, L = 590µH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
AS
= 18A. (See Figure 12)
140A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Caculated continuous current based on maximum allowable junction
Pulse width
temperature; Package limitation current = 20A.
This is applied for I-PAK, L
lead and center of die contact
––– 0.032 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
9.3
Min. Typ. Max. Units
30
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.031
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
750
400
140
–––
–––
–––
4.5
11
99
16
28
7.5
53
94
300µs; duty cycle
–––
–––
100
–––
–––
–––
–––
250
–––
–––
–––
–––
–––
33
4.0
7.3
140
120
25
29
13
1.3
80
V/°C
nH
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
S
of D-PAK is measured between
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
I
R
R
Between lead,
6mm (0.25in.)
from package
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 18A
= 18A
2%.
= 25°C, I
= 25°C, I
= 0.8
= 13
= 24V
= 15V
= 0V
= 25V
= 0V, I
= 10V, I
= V
= 25V, I
= 30V, V
= 24V, V
= 20V
= -20V
= 10V, See Fig. 6 and 13
GS
, I
D
See Fig. 10
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 18A
= 18A, V
= 18A
= 250µA
= 18A
= 0V
= 0V, T
D
= 1mA
GS
J
= 150°C
= 0V
G
G
S
+L
D
S
D
)
S
D