FDMC89521L FAIRCHILD [Fairchild Semiconductor], FDMC89521L Datasheet - Page 2

• Manufacturer Part Number: FDMC89521L
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDMC89521L Rev. C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
ΔT
ΔT
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
θJA
AS
DSS
GS(th)
DSS
J
J
of 32 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25
Parameter
°
C, L = 1 mH, I
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
a. 65 °C/W when mounted on
AS
a 1 in
= 8 A, V
2
pad of 2 oz copper
DD
= 54 V, V
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
T
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
J
DS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 8.2 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 125 °C
GS
= 30 V, V
= 30 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 10 V, I
= 0 V, I
= 0 V, I
= 48 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= ±20 V, V
= 10 V. 100% tested at L = 3 mH, I
2
DS
Test Conditions
, I
S
S
D
D
D
D
D
= 8.2 A
= 1.6 A
D
GS
GEN
GS
= 250 μA
GS
= 8.2 A,
= 8.2 A
= 8.2 A
= 8.2 A,
DS
= 6.7 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 8.2 A
= 30 V,
(Note 2)
(Note 2)
θJC
AS
is guaranteed by design while R
= 5.4 A.
Min
60
1
b. 155 °C/W when mounted on
a minimum pad of 2 oz copper
1228
0.85
0.75
243
0.7
Typ
7.9
2.1
1.7
7.9
3.8
1.9
25
1.9
10
11
18
17
13
21
20
28
-6
30
1635
±100
Max
325
1.3
1.2
20
15
40
θCA
17
27
26
16
10
33
10
24
12
www.fairchildsemi.com
3
1
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
nC
nC
μA
nC
nC
ns
nA
ns
ns
ns
ns
Ω
V
V
V
S