FDMC8878_12 FAIRCHILD [Fairchild Semiconductor], FDMC8878_12 Datasheet - Page 4

• Manufacturer Part Number: FDMC8878_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDMC8878 Rev.
Typical Characteristics
0.001
0.01
0.1
10
10
80
10
20
Figure 7.
8
6
4
2
0
1
1
0.01
0.1
D4
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 9.6A
V DS , DRAIN to SOURCE VOLTAGE (V)
Switching Capability
Gate Charge Characteristics
t
0.1
AV
DS(on)
5
Operating Area
Q
Unclamped Inductive
, TIME IN AVALANCHE(ms)
g
, GATE CHARGE(nC)
T
1
J
V
DD
= 125
= 10V
o
10
SINGLE PULSE
T J = MAX RATED
T A = 25
V
C
1
DD
T
= 15V
T
J
o
J
C
= 25°C unless otherwise noted
V
= 25
DD
10
o
= 20V
C
15
10
1ms
100ms
10s
100us
10ms
1s
DC
80
80
20
4
3000
1000
300
100
100
0.5
10
Figure 10.
50
12
10
10
1
8
6
4
2
0
0.1
Figure 12.
25
-3
Current vs Ambient Temperature
Figure 8.
R
f = 1MHz
V
T
GS
JA
10
V
= 60
= 0V
DS
-2
T
V
SINGLE PULSE
50
Power Dissipation
Maximum Continuous Drain
to Source Voltage
A
, DRAIN TO SOURCE VOLTAGE (V)
GS
o
, AMBIENT TEMPERATURE
C/W
t, PULSE WIDTH (s)
Single Pulse Maximum
= 10V
Capacitance vs Drain
10
V
-1
GS
1
75
= 4.5V
10
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
A
0
I = I
= 25
C
C
C
25
iss
oss
rss
100
V
o
GS
C
10
o
= 10V
1
C DERATE PEAK
150 T A
---------------------- -
125
–
(
www.fairchildsemi.com
10
125
o
10
C
)
2
10
30
150
3