FDMC8327L FAIRCHILD [Fairchild Semiconductor], FDMC8327L Datasheet

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC8327L FDMC8327L ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 ® MOSFET General Description = 12 A This N-Channel MOSFET is produced using Fairchild D Semiconductor’s advanced Power Trench = been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting °C; N-ch 0.3 mH ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev. °C unless otherwise noted 4 3 μ s 0.9 1.2 1 ...

Page 4

... MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev. °C unless otherwise noted J 10000 1000 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMC8327L Rev.C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...