FDD8451_08 FAIRCHILD [Fairchild Semiconductor], FDD8451_08 Datasheet - Page 2

• Manufacturer Part Number: FDD8451_08
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

FDD8451 Rev. B1
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
∆V
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
∆T
∆T
iss
oss
rss
g
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transcondductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
C, L = 0.1mH, I
AS
= 20A ,V
Parameter
DD
= 36V, V
T
J
GS
= 25°C unless otherwise noted
= 10V.
I
I
25°C
V
V
D
D
V
I
25°C
V
V
V
T
V
V
f = 1MHz
f = 1MHz
V
V
V
V
I
I
DS
GS
D
F
F
J
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250µA, V
= 250µA, referenced to
= 9A, di/dt = 100A/µs
= 9A, di/dt = 100A/µs
= 250µA, referenced to
= 150°C
= 32V, V
= ±20V, V
= 20V, I
= 5V, I
= 20V, V
= 0V, I
= V
= 10V, I
= 4.5V, I
= 10V, I
= 20V, I
= 10V, R
= 10V
2
Test Conditions
DS
, I
D
S
D
D
D
D
GS
D
= 9A
GS
D
= 9A
GS
GEN
= 9A
DS
= 9A
= 9A
= 9A
= 250µA
= 7A
= 0V
= 0V
= 0V,
= 0V
= 6Ω
Min
40
1
33.5
Typ
0.87
-5.7
780
112
8.6
2.5
3.7
2.1
1.1
19
16
19
23
32
29
72
25
19
7
3
2
www.fairchildsemi.com
±100
Max
990
150
110
1.2
14
10
34
10
20
24
30
41
11
38
29
1
3
mV/°C
Units
mV/°C
mΩ
µA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nC
ns
V
Ω
V
V
S