FDMC2523P_12 FAIRCHILD [Fairchild Semiconductor], FDMC2523P_12 Datasheet - Page 2

• Manufacturer Part Number: FDMC2523P_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

FDMC2523P Rev.C3
Notes:
1: R
2: I
3: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
4: Essentially independent of operating temperature.
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
I
I
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
gs
gd
rr
R
Symbol
SD
θJA
θJC
DSS
GS(th)
DSS
J
J
< -3A, dI/dt < 300A/us, V
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum continuous Drain - Source Diode Forward Current
Maximum Pulse Drain - Source Doide Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
< B
VDSS
Parameter
θCA
, Starting T
is determined by the user's board design.
a. 60°C/W when mounted on
J
T
= 25°C
a 1 in
J
= 25°C unless otherwise noted
2
pad of 2 oz copper
V
V
V
V
V
I
V
f = 1MHz
f = 1MHz
I
I
V
V
V
I
V
V
V
I
F
D
D
D
D
GS
DD
GS
GS
DD
DS
DS
GS
GS
GS
GS
DS
= -3.0A, di/dt = 100A/μs
= -250μA, V
= -250μA, referenced to 25°C
= -250μA, referenced to 25°C
= -3A
= -10V
= 0V, I
= -25V, V
= -75V, I
= -10V, R
= -75V
= -150V, V
= -40V, I
= ±30V, V
= V
= -10V, I
= -10V, I
DS
2
Test Conditions
, I
S
= -3.0A
D
D
D
D
D
GS
GEN
GS
DS
= -3A
= -250μA
GS
= -1.5A
= -1.5A
= -1.5A , T
= 0V,
= 0V
= 0V
= 0V
= 25Ω
T
J
= 125°C
(Note 3,4)
(Note 3,4)
J
= 125°C
(Note 4)
(Note 3)
b.135°C/W when mounted on a
minimum pad of 2 oz copper
-150
Min
-3
-138
0.27
Typ
-1.8
6.2
1.4
3.3
-3.8
200
15
19
13
1.1
2.0
1.4
7.5
11
93
60
10
6
±100
Max
-10
270
-12
1.5
3.6
www.fairchildsemi.com
-1
27
20
35
24
80
15
-3
-5
-5
9
mV/°C
mV/°C
Units
μA
nA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
Ω
S
Ω
A
A
V