LPC1111 NXP [NXP Semiconductors], LPC1111 Datasheet - Page 42

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LPC1111

Manufacturer Part Number
LPC1111
Description
32-bit ARM Cortex-M0 microcontroller; up to 32 kB flash and 8 kB SRAM
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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NXP Semiconductors
10. Dynamic characteristics
LPC1111_12_13_14_1
Product data sheet
10.1 Flash memory
10.2 External clock
Table 10.
T
[1]
[2]
Table 11.
T
[1]
[2]
Symbol
N
t
t
t
Symbol
f
T
t
t
t
t
ret
er
prog
osc
CHCX
CLCX
CLCH
CHCL
amb
amb
Fig 19. External clock timing (with an amplitude of at least V
cy(clk)
endu
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 °C), nominal supply
voltages.
=
=
40
40
°
°
Flash characteristics
Dynamic characteristic: external clock
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
C to +85
C to +85
Parameter
endurance
retention time
erase time
programming
time
All information provided in this document is subject to legal disclaimers.
°
°
C, unless otherwise specified.
C; V
Rev. 01 — 16 April 2010
DD
over specified ranges.
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
t
CHCL
Conditions
t
CLCX
[1]
32-bit ARM Cortex-M0 microcontroller
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
[1]
[2]
T
cy(clk)
LPC1111/12/13/14
10
Min
10000
20
95
0.95
× 0.4
× 0.4
t
CLCH
t
CHCX
i(RMS)
Typ
-
-
-
100
1
Typ
-
-
-
-
-
-
= 200 mV)
[2]
002aaa907
© NXP B.V. 2010. All rights reserved.
Max
25
1000
-
-
5
5
Max
-
-
-
105
1.05
Unit
MHz
ns
ns
ns
ns
ns
42 of 59
Unit
cycles
years
years
ms
ms

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