BH616UV8010AI BSI [Brilliance Semiconductor], BH616UV8010AI Datasheet - Page 7

• Manufacturer Part Number: BH616UV8010AI
• Description: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BH616UV8010
n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
E2LAX
WLWH
WHAX
DVWH
WHDX
WHQX
AVWL
AVWH
ELWH
BLWH
WLQZ
GHQZ
AVAX
BSI
ADDRESS
OE
CE1
CE2
LB, UB
WE
D
D
OUT
IN
(1)
PARANETER
NAME
t
t
t
t
t
t
t
t
t
t
t
t
t
WR1
WR2
WHZ
OHZ
WC
AW
CW
BW
WP
DW
OW
AS
DH
Write Cycle Time
Address Set up Time
Address Valid to End of Write
Chip Select to End of Write
Data Byte Control to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
t
AS
OHZ
A
= -25
(4,10)
DESCRIPTION
O
C to +85
(5)
(5)
7
t
AW
O
C)
t
t
t
CW
CW
WP
t
t
WC
BW
(CE1, WE)
(11)
(11)
(2)
(LB, UB)
(CE2)
t
DW
MIN.
70
50
50
50
35
30
--
--
0
0
0
0
5
CYCLE TIME : 70ns
t
t
WR1
WR2
t
DH
(3)
(3)
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
BH616UV8010
MAX.
20
25
--
--
--
--
--
--
--
--
--
--
--
UNITS
Revision 1.0
Jul.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2005